Method of providing a flow of particles to a substrate, photovoltaic module and plasma source assembly
A plasma source assembly (1) within a plasma enhanced chemical vapor deposition (PECVD) device, a photovoltaic module and a method of providing a flow of particles to a substrate. A plasma treatment outlet of a housing (8) forms a plasma process zone for depositing a layer on the surface (2) by rela...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LAMERS, MACHTELD WILLEMIJN PETRONEL ELISABETH WEEBER, ARTHUR WOUTER |
| description | A plasma source assembly (1) within a plasma enhanced chemical vapor deposition (PECVD) device, a photovoltaic module and a method of providing a flow of particles to a substrate. A plasma treatment outlet of a housing (8) forms a plasma process zone for depositing a layer on the surface (2) by relative movement of the surface (2) along the plasma treatment outlet. The housing (8) has an upstream elongated edge (6) and a downstream elongated edge (7). A plasma creation zone (3) is present within the housing (8), as well as one or more input ports (9-11) positioned in the plasma process zone for providing a process gas to the plasma creation zone (3). The plasma source assembly (1) is further arranged to provide a gradient in the concentration of particles in the flow as measured from the upstream elongated edge (6) to the downstream elongated edge (7). |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW201805464A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW201805464A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW201805464A3</originalsourceid><addsrcrecordid>eNqNyrEKwjAQgOEuDqK-w7krVK3iKqK4uBUcyzW52EDaC7lrxbe3iA_g9MPHP83cnbRhC-wgJh689d0TEFzg19cwqTeBBJRHlr4WTai0gtiw8sBB0Rto2faBADsLMaC048l9MqOIUFuH9zybOAxCi19n2fJ6Kc-3NUWuSCIa6kir8rHNN8d8XxyK0-6f5wNTRj-r</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of providing a flow of particles to a substrate, photovoltaic module and plasma source assembly</title><source>esp@cenet</source><creator>LAMERS, MACHTELD WILLEMIJN PETRONEL ELISABETH ; WEEBER, ARTHUR WOUTER</creator><creatorcontrib>LAMERS, MACHTELD WILLEMIJN PETRONEL ELISABETH ; WEEBER, ARTHUR WOUTER</creatorcontrib><description>A plasma source assembly (1) within a plasma enhanced chemical vapor deposition (PECVD) device, a photovoltaic module and a method of providing a flow of particles to a substrate. A plasma treatment outlet of a housing (8) forms a plasma process zone for depositing a layer on the surface (2) by relative movement of the surface (2) along the plasma treatment outlet. The housing (8) has an upstream elongated edge (6) and a downstream elongated edge (7). A plasma creation zone (3) is present within the housing (8), as well as one or more input ports (9-11) positioned in the plasma process zone for providing a process gas to the plasma creation zone (3). The plasma source assembly (1) is further arranged to provide a gradient in the concentration of particles in the flow as measured from the upstream elongated edge (6) to the downstream elongated edge (7).</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180216&DB=EPODOC&CC=TW&NR=201805464A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180216&DB=EPODOC&CC=TW&NR=201805464A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAMERS, MACHTELD WILLEMIJN PETRONEL ELISABETH</creatorcontrib><creatorcontrib>WEEBER, ARTHUR WOUTER</creatorcontrib><title>Method of providing a flow of particles to a substrate, photovoltaic module and plasma source assembly</title><description>A plasma source assembly (1) within a plasma enhanced chemical vapor deposition (PECVD) device, a photovoltaic module and a method of providing a flow of particles to a substrate. A plasma treatment outlet of a housing (8) forms a plasma process zone for depositing a layer on the surface (2) by relative movement of the surface (2) along the plasma treatment outlet. The housing (8) has an upstream elongated edge (6) and a downstream elongated edge (7). A plasma creation zone (3) is present within the housing (8), as well as one or more input ports (9-11) positioned in the plasma process zone for providing a process gas to the plasma creation zone (3). The plasma source assembly (1) is further arranged to provide a gradient in the concentration of particles in the flow as measured from the upstream elongated edge (6) to the downstream elongated edge (7).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQgOEuDqK-w7krVK3iKqK4uBUcyzW52EDaC7lrxbe3iA_g9MPHP83cnbRhC-wgJh689d0TEFzg19cwqTeBBJRHlr4WTai0gtiw8sBB0Rto2faBADsLMaC048l9MqOIUFuH9zybOAxCi19n2fJ6Kc-3NUWuSCIa6kir8rHNN8d8XxyK0-6f5wNTRj-r</recordid><startdate>20180216</startdate><enddate>20180216</enddate><creator>LAMERS, MACHTELD WILLEMIJN PETRONEL ELISABETH</creator><creator>WEEBER, ARTHUR WOUTER</creator><scope>EVB</scope></search><sort><creationdate>20180216</creationdate><title>Method of providing a flow of particles to a substrate, photovoltaic module and plasma source assembly</title><author>LAMERS, MACHTELD WILLEMIJN PETRONEL ELISABETH ; WEEBER, ARTHUR WOUTER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201805464A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LAMERS, MACHTELD WILLEMIJN PETRONEL ELISABETH</creatorcontrib><creatorcontrib>WEEBER, ARTHUR WOUTER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LAMERS, MACHTELD WILLEMIJN PETRONEL ELISABETH</au><au>WEEBER, ARTHUR WOUTER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of providing a flow of particles to a substrate, photovoltaic module and plasma source assembly</title><date>2018-02-16</date><risdate>2018</risdate><abstract>A plasma source assembly (1) within a plasma enhanced chemical vapor deposition (PECVD) device, a photovoltaic module and a method of providing a flow of particles to a substrate. A plasma treatment outlet of a housing (8) forms a plasma process zone for depositing a layer on the surface (2) by relative movement of the surface (2) along the plasma treatment outlet. The housing (8) has an upstream elongated edge (6) and a downstream elongated edge (7). A plasma creation zone (3) is present within the housing (8), as well as one or more input ports (9-11) positioned in the plasma process zone for providing a process gas to the plasma creation zone (3). The plasma source assembly (1) is further arranged to provide a gradient in the concentration of particles in the flow as measured from the upstream elongated edge (6) to the downstream elongated edge (7).</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_TW201805464A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method of providing a flow of particles to a substrate, photovoltaic module and plasma source assembly |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T21%3A38%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LAMERS,%20MACHTELD%20WILLEMIJN%20PETRONEL%20ELISABETH&rft.date=2018-02-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW201805464A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |