Method for etching copper layer
A method MT according to one embodiment of the present invention is for etching a layer EL to be etched, the layer EL containing copper and being included in a wafer W. The wafer W is provided with: the layer EL to be etched; and a mask MK provided on the layer EL to be etched. The method MT etches...
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| creator | URAYAMA, DAISUKE MIYOSHI, HIDENORI MATSUMOTO, KENJI TAHARA, SHIGERU |
| description | A method MT according to one embodiment of the present invention is for etching a layer EL to be etched, the layer EL containing copper and being included in a wafer W. The wafer W is provided with: the layer EL to be etched; and a mask MK provided on the layer EL to be etched. The method MT etches the layer EL to be etched by repeating a sequence SQ that includes: a first step for generating a first gas plasma in a processing container 12 of a plasma processing device 10 in which the wafer W is housed; a second step for generating a second gas plasma in the processing container 12; and a third step for generating a third gas plasma in the processing container 12. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a gas mixture of a rare gas and hydrogen gas, and the third gas contains hydrogen gas. |
| format | Patent |
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The wafer W is provided with: the layer EL to be etched; and a mask MK provided on the layer EL to be etched. The method MT etches the layer EL to be etched by repeating a sequence SQ that includes: a first step for generating a first gas plasma in a processing container 12 of a plasma processing device 10 in which the wafer W is housed; a second step for generating a second gas plasma in the processing container 12; and a third step for generating a third gas plasma in the processing container 12. 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The wafer W is provided with: the layer EL to be etched; and a mask MK provided on the layer EL to be etched. The method MT etches the layer EL to be etched by repeating a sequence SQ that includes: a first step for generating a first gas plasma in a processing container 12 of a plasma processing device 10 in which the wafer W is housed; a second step for generating a second gas plasma in the processing container 12; and a third step for generating a third gas plasma in the processing container 12. 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The wafer W is provided with: the layer EL to be etched; and a mask MK provided on the layer EL to be etched. The method MT etches the layer EL to be etched by repeating a sequence SQ that includes: a first step for generating a first gas plasma in a processing container 12 of a plasma processing device 10 in which the wafer W is housed; a second step for generating a second gas plasma in the processing container 12; and a third step for generating a third gas plasma in the processing container 12. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a gas mixture of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | Method for etching copper layer |
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