Field-effect transistors with a non-relaxed strained channel

Device structures for a field-effect transistor and methods of forming such device structures using a device layer of a silicon-on-insulator substrate. A channel and an isolation region are formed in the device layer. The channel is located beneath a gate structure is formed on the device layer and...

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Hauptverfasser:	ORTOLLAND, CLAUDE, NUMMY, KAREN A
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	ORTOLLAND, CLAUDE NUMMY, KAREN A
description	Device structures for a field-effect transistor and methods of forming such device structures using a device layer of a silicon-on-insulator substrate. A channel and an isolation region are formed in the device layer. The channel is located beneath a gate structure is formed on the device layer and is comprised of a semiconductor material under strain. A portion of the device layer is located between the first isolation region and the channel. The portion of the device layer is under a strain that is less than the strain in the semiconductor material of the channel.
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title	Field-effect transistors with a non-relaxed strained channel
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