Systems and methods for eliminating fluorine residue in a substrate processing chamber using a plasma-based process
A method for operating a substrate processing chamber includes after performing a process using a fluorine-based gas in the substrate processing chamber: (a) during a first predetermined period, supplying a gas mixture to the substrate processing chamber including one or more gases selected from a g...
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| creator | PHARKYA, AMIT BRAVO, ANDREW STRATTON GUHA, JOYDEEP |
| description | A method for operating a substrate processing chamber includes after performing a process using a fluorine-based gas in the substrate processing chamber: (a) during a first predetermined period, supplying a gas mixture to the substrate processing chamber including one or more gases selected from a group consisting of molecular oxygen, molecular nitrogen, nitric oxide and nitrous oxide and supplying RF power to strike plasma in the substrate processing chamber; (b) during a second predetermined period after the first predetermined period, supplying molecular hydrogen gas and RF power to the substrate processing chamber; (c) repeating (a) and (b) one or more times; (d) purging the substrate processing chamber with molecular nitrogen gas; (e) increasing chamber pressure; (f) evacuating the substrate processing chamber; and (g) repeating (d), (e) and (f) one or more times. |
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(b) during a second predetermined period after the first predetermined period, supplying molecular hydrogen gas and RF power to the substrate processing chamber; (c) repeating (a) and (b) one or more times; (d) purging the substrate processing chamber with molecular nitrogen gas; (e) increasing chamber pressure; (f) evacuating the substrate processing chamber; and (g) repeating (d), (e) and (f) one or more times.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; CLEANING ; CLEANING IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PERFORMING OPERATIONS ; PREVENTION OF FOULING IN GENERAL ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171001&DB=EPODOC&CC=TW&NR=201733697A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171001&DB=EPODOC&CC=TW&NR=201733697A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PHARKYA, AMIT</creatorcontrib><creatorcontrib>BRAVO, ANDREW STRATTON</creatorcontrib><creatorcontrib>GUHA, JOYDEEP</creatorcontrib><title>Systems and methods for eliminating fluorine residue in a substrate processing chamber using a plasma-based process</title><description>A method for operating a substrate processing chamber includes after performing a process using a fluorine-based gas in the substrate processing chamber: (a) during a first predetermined period, supplying a gas mixture to the substrate processing chamber including one or more gases selected from a group consisting of molecular oxygen, molecular nitrogen, nitric oxide and nitrous oxide and supplying RF power to strike plasma in the substrate processing chamber; (b) during a second predetermined period after the first predetermined period, supplying molecular hydrogen gas and RF power to the substrate processing chamber; (c) repeating (a) and (b) one or more times; (d) purging the substrate processing chamber with molecular nitrogen gas; (e) increasing chamber pressure; (f) evacuating the substrate processing chamber; and (g) repeating (d), (e) and (f) one or more times.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyr0KwjAUhuEuDqLew_ECCmrB4iiiuFtwLCfNVxvIHznJ4N2LorvTywvPvJLbUzKcEHtNDnkKWmgMiWCNM56z8Q8abQnJeFCCGF1AxhOTFCU5cQbFFAaIvOkwsVNIVD7HFC2L41qxQP_cspqNbAWrbxfV-nLuTtcaMfSQyAM8ct_dd5tt2zT7Q3ts_jEvhK1FGg</recordid><startdate>20171001</startdate><enddate>20171001</enddate><creator>PHARKYA, AMIT</creator><creator>BRAVO, ANDREW STRATTON</creator><creator>GUHA, JOYDEEP</creator><scope>EVB</scope></search><sort><creationdate>20171001</creationdate><title>Systems and methods for eliminating fluorine residue in a substrate processing chamber using a plasma-based process</title><author>PHARKYA, AMIT ; 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(b) during a second predetermined period after the first predetermined period, supplying molecular hydrogen gas and RF power to the substrate processing chamber; (c) repeating (a) and (b) one or more times; (d) purging the substrate processing chamber with molecular nitrogen gas; (e) increasing chamber pressure; (f) evacuating the substrate processing chamber; and (g) repeating (d), (e) and (f) one or more times.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
| title | Systems and methods for eliminating fluorine residue in a substrate processing chamber using a plasma-based process |
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