Approaches for patterning metal line ends for back end of line (BEOL) interconnects

Approaches for patterning metal line ends for back end of line (BEOL) interconnects, and the resulting structures, are described. In an example, a metallization layer of an interconnect structure for a semiconductor die includes a metal line disposed in a trench of an interlayer dielectric (ILD) mat...

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Hauptverfasser: KANDAS, ANGELO W, HARAN, MOHIT K, DAS, RITESH K, SRIDHAR, DEEPAK, LIM, CHUL-HYUN, KIRBY, STEVEN D, TAN, ELLIOT N, BHIMARASETTI, GOPINATH, GULER, LEONARD P, TRIBATHI, ABHINAV, PARKER, JASON M, BELL, MARIE JUSTINE, PRINCE, MATTHEW J, GRANADOS ALPIZAR, BERNAL, ASORO, MICHAEL A, BUEHLER, MARK F, YEOH, ANDREW W, HARPER, MICHAEL K
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creator KANDAS, ANGELO W
HARAN, MOHIT K
DAS, RITESH K
SRIDHAR, DEEPAK
LIM, CHUL-HYUN
KIRBY, STEVEN D
TAN, ELLIOT N
BHIMARASETTI, GOPINATH
GULER, LEONARD P
TRIBATHI, ABHINAV
PARKER, JASON M
BELL, MARIE JUSTINE
PRINCE, MATTHEW J
GRANADOS ALPIZAR, BERNAL
ASORO, MICHAEL A
BUEHLER, MARK F
YEOH, ANDREW W
HARPER, MICHAEL K
description Approaches for patterning metal line ends for back end of line (BEOL) interconnects, and the resulting structures, are described. In an example, a metallization layer of an interconnect structure for a semiconductor die includes a metal line disposed in a trench of an interlayer dielectric (ILD) material layer. The ILD material layer is composed of a first dielectric material. A conductive via is disposed in the ILD material layer, below and electrically connected to the metal line. A dielectric plug is directly adjacent to the metal line and the conductive via. The dielectric plug is composed of a second dielectric material different from the first dielectric material.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Approaches for patterning metal line ends for back end of line (BEOL) interconnects
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