Apparatus and method for the chemical treatment of a semiconductor substrate

An apparatus for chemically treating a semiconductor substrate has a pretreatment device that is arranged, in a direction of travel of the semiconductor substrate, upstream of a first deposition device and of a second deposition device. The pretreatment device is used for creating a peripheral bound...

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Bibliographische Detailangaben
Hauptverfasser:	MELNYK, IHOR, FATH, PETER
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL TRANSPORTING
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Beschreibung
Zusammenfassung:	An apparatus for chemically treating a semiconductor substrate has a pretreatment device that is arranged, in a direction of travel of the semiconductor substrate, upstream of a first deposition device and of a second deposition device. The pretreatment device is used for creating a peripheral boundary region on the semiconductor substrate such that a fluid, deposited subsequently by means of the first deposition device, is contained and retained on a top face of the substrate . The first deposition device is located above a process basin of the second deposition device such that the fluid entirely covers the top face of the substrate during the treatment of the bottom face of the substrate.