Silicon single crystal manufacturing method

A silicon single crystal manufacturing method, including: a melting step which heats a quartz crucible containing silicon with a heat portion to melt the silicon, a dipping method which makes a seed crystal in contact with silicon molten liquid of the quartz crucible, and a pulling-up step which gro...

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1. Verfasser:	KIM, TEGI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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creator	KIM, TEGI
description	A silicon single crystal manufacturing method, including: a melting step which heats a quartz crucible containing silicon with a heat portion to melt the silicon, a dipping method which makes a seed crystal in contact with silicon molten liquid of the quartz crucible, and a pulling-up step which grows the silicon single crystal, wherein in the pulling-up step, growth of the straight body portion of the silicon single crystal is begun after the power consumption of the heat portion reaches above 10000 kWh, and the entire silicon single crystal is grown.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW201726985A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW201726985A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW201726985A3</originalsourceid><addsrcrecordid>eNrjZNAOzszJTM7PUyjOzEvPSVVILqosLknMUchNzCtNS0wuKS0CiivkppZk5KfwMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL4kHAjA0NzIzNLC1NHY2LUAACZpCog</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Silicon single crystal manufacturing method</title><source>esp@cenet</source><creator>KIM, TEGI</creator><creatorcontrib>KIM, TEGI</creatorcontrib><description>A silicon single crystal manufacturing method, including: a melting step which heats a quartz crucible containing silicon with a heat portion to melt the silicon, a dipping method which makes a seed crystal in contact with silicon molten liquid of the quartz crucible, and a pulling-up step which grows the silicon single crystal, wherein in the pulling-up step, growth of the straight body portion of the silicon single crystal is begun after the power consumption of the heat portion reaches above 10000 kWh, and the entire silicon single crystal is grown.</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170801&DB=EPODOC&CC=TW&NR=201726985A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170801&DB=EPODOC&CC=TW&NR=201726985A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM, TEGI</creatorcontrib><title>Silicon single crystal manufacturing method</title><description>A silicon single crystal manufacturing method, including: a melting step which heats a quartz crucible containing silicon with a heat portion to melt the silicon, a dipping method which makes a seed crystal in contact with silicon molten liquid of the quartz crucible, and a pulling-up step which grows the silicon single crystal, wherein in the pulling-up step, growth of the straight body portion of the silicon single crystal is begun after the power consumption of the heat portion reaches above 10000 kWh, and the entire silicon single crystal is grown.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAOzszJTM7PUyjOzEvPSVVILqosLknMUchNzCtNS0wuKS0CiivkppZk5KfwMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL4kHAjA0NzIzNLC1NHY2LUAACZpCog</recordid><startdate>20170801</startdate><enddate>20170801</enddate><creator>KIM, TEGI</creator><scope>EVB</scope></search><sort><creationdate>20170801</creationdate><title>Silicon single crystal manufacturing method</title><author>KIM, TEGI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201726985A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM, TEGI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, TEGI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Silicon single crystal manufacturing method</title><date>2017-08-01</date><risdate>2017</risdate><abstract>A silicon single crystal manufacturing method, including: a melting step which heats a quartz crucible containing silicon with a heat portion to melt the silicon, a dipping method which makes a seed crystal in contact with silicon molten liquid of the quartz crucible, and a pulling-up step which grows the silicon single crystal, wherein in the pulling-up step, growth of the straight body portion of the silicon single crystal is begun after the power consumption of the heat portion reaches above 10000 kWh, and the entire silicon single crystal is grown.</abstract><oa>free_for_read</oa></addata></record>
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language	chi ; eng
recordid	cdi_epo_espacenet_TW201726985A
source	esp@cenet
subjects	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title	Silicon single crystal manufacturing method
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