The method of forming semiconductor structure

The method of forming semiconductor structure

A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes receiving a substrate with two sections of conductors thereon that are adjacent to each other, and a valley between the two sections of the conductors, filling the valley with a first pas...

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Hauptverfasser: LEE, CHIH-MING, LU, WEIUNG, LIAO, HUNG, CHUANG, KUN-TSANG
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LEE, CHIH-MING
LU, WEIUNG
LIAO, HUNG
CHUANG, KUN-TSANG
description A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes receiving a substrate with two sections of conductors thereon that are adjacent to each other, and a valley between the two sections of the conductors, filling the valley with a first passivation material to form a passivation valley, applying a second passivation material overlying the two sections of conductors and the passivation valley and over the substrate, and removing the second passivation material overlying the two sections of conductors and the passivation valley, and the second passivation material over the substrate but not in contact with the two sections of conductors and the passivation valley.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title The method of forming semiconductor structure
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