Low volume showerhead with faceplate holes for improved flow uniformity

A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate inc...

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Hauptverfasser: PASQUALE, FRANK, PETRAGLIA, JENNIFER L, VARADARAJAN, SESHASAYEE, LAVOIE, ADRIEN, CHANDRASEKHARAN, RAMESH, SANGPLUNG, SAANGRUT, KANG, HU, SAKIYAMA, YUKINORI, SWAMINATHAN, SHANKAR, SAJJAD, BASHA, AUGUSTYNIAK, EDWARD, BALDASSERONI, CHLOE
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creator PASQUALE, FRANK
PETRAGLIA, JENNIFER L
VARADARAJAN, SESHASAYEE
LAVOIE, ADRIEN
CHANDRASEKHARAN, RAMESH
SANGPLUNG, SAANGRUT
KANG, HU
SAKIYAMA, YUKINORI
SWAMINATHAN, SHANKAR
SAJJAD, BASHA
AUGUSTYNIAK, EDWARD
BALDASSERONI, CHLOE
description A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW201712144A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW201712144A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW201712144A3</originalsourceid><addsrcrecordid>eNrjZHD3yS9XKMvPKc1NVSjOyC9PLcpITUxRKM8syVBIS0xOLchJLElVyMjPSS1WSMsvUsjMLSjKL0tNUUjLAWoszcsECuZmllTyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4gKgUXmpJfEh4UYGhuaGRoYmJo7GxKgBAKf_NJk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Low volume showerhead with faceplate holes for improved flow uniformity</title><source>esp@cenet</source><creator>PASQUALE, FRANK ; PETRAGLIA, JENNIFER L ; VARADARAJAN, SESHASAYEE ; LAVOIE, ADRIEN ; CHANDRASEKHARAN, RAMESH ; SANGPLUNG, SAANGRUT ; KANG, HU ; SAKIYAMA, YUKINORI ; SWAMINATHAN, SHANKAR ; SAJJAD, BASHA ; AUGUSTYNIAK, EDWARD ; BALDASSERONI, CHLOE</creator><creatorcontrib>PASQUALE, FRANK ; PETRAGLIA, JENNIFER L ; VARADARAJAN, SESHASAYEE ; LAVOIE, ADRIEN ; CHANDRASEKHARAN, RAMESH ; SANGPLUNG, SAANGRUT ; KANG, HU ; SAKIYAMA, YUKINORI ; SWAMINATHAN, SHANKAR ; SAJJAD, BASHA ; AUGUSTYNIAK, EDWARD ; BALDASSERONI, CHLOE</creatorcontrib><description>A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170401&amp;DB=EPODOC&amp;CC=TW&amp;NR=201712144A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170401&amp;DB=EPODOC&amp;CC=TW&amp;NR=201712144A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PASQUALE, FRANK</creatorcontrib><creatorcontrib>PETRAGLIA, JENNIFER L</creatorcontrib><creatorcontrib>VARADARAJAN, SESHASAYEE</creatorcontrib><creatorcontrib>LAVOIE, ADRIEN</creatorcontrib><creatorcontrib>CHANDRASEKHARAN, RAMESH</creatorcontrib><creatorcontrib>SANGPLUNG, SAANGRUT</creatorcontrib><creatorcontrib>KANG, HU</creatorcontrib><creatorcontrib>SAKIYAMA, YUKINORI</creatorcontrib><creatorcontrib>SWAMINATHAN, SHANKAR</creatorcontrib><creatorcontrib>SAJJAD, BASHA</creatorcontrib><creatorcontrib>AUGUSTYNIAK, EDWARD</creatorcontrib><creatorcontrib>BALDASSERONI, CHLOE</creatorcontrib><title>Low volume showerhead with faceplate holes for improved flow uniformity</title><description>A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD3yS9XKMvPKc1NVSjOyC9PLcpITUxRKM8syVBIS0xOLchJLElVyMjPSS1WSMsvUsjMLSjKL0tNUUjLAWoszcsECuZmllTyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4gKgUXmpJfEh4UYGhuaGRoYmJo7GxKgBAKf_NJk</recordid><startdate>20170401</startdate><enddate>20170401</enddate><creator>PASQUALE, FRANK</creator><creator>PETRAGLIA, JENNIFER L</creator><creator>VARADARAJAN, SESHASAYEE</creator><creator>LAVOIE, ADRIEN</creator><creator>CHANDRASEKHARAN, RAMESH</creator><creator>SANGPLUNG, SAANGRUT</creator><creator>KANG, HU</creator><creator>SAKIYAMA, YUKINORI</creator><creator>SWAMINATHAN, SHANKAR</creator><creator>SAJJAD, BASHA</creator><creator>AUGUSTYNIAK, EDWARD</creator><creator>BALDASSERONI, CHLOE</creator><scope>EVB</scope></search><sort><creationdate>20170401</creationdate><title>Low volume showerhead with faceplate holes for improved flow uniformity</title><author>PASQUALE, FRANK ; PETRAGLIA, JENNIFER L ; VARADARAJAN, SESHASAYEE ; LAVOIE, ADRIEN ; CHANDRASEKHARAN, RAMESH ; SANGPLUNG, SAANGRUT ; KANG, HU ; SAKIYAMA, YUKINORI ; SWAMINATHAN, SHANKAR ; SAJJAD, BASHA ; AUGUSTYNIAK, EDWARD ; BALDASSERONI, CHLOE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201712144A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>PASQUALE, FRANK</creatorcontrib><creatorcontrib>PETRAGLIA, JENNIFER L</creatorcontrib><creatorcontrib>VARADARAJAN, SESHASAYEE</creatorcontrib><creatorcontrib>LAVOIE, ADRIEN</creatorcontrib><creatorcontrib>CHANDRASEKHARAN, RAMESH</creatorcontrib><creatorcontrib>SANGPLUNG, SAANGRUT</creatorcontrib><creatorcontrib>KANG, HU</creatorcontrib><creatorcontrib>SAKIYAMA, YUKINORI</creatorcontrib><creatorcontrib>SWAMINATHAN, SHANKAR</creatorcontrib><creatorcontrib>SAJJAD, BASHA</creatorcontrib><creatorcontrib>AUGUSTYNIAK, EDWARD</creatorcontrib><creatorcontrib>BALDASSERONI, CHLOE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PASQUALE, FRANK</au><au>PETRAGLIA, JENNIFER L</au><au>VARADARAJAN, SESHASAYEE</au><au>LAVOIE, ADRIEN</au><au>CHANDRASEKHARAN, RAMESH</au><au>SANGPLUNG, SAANGRUT</au><au>KANG, HU</au><au>SAKIYAMA, YUKINORI</au><au>SWAMINATHAN, SHANKAR</au><au>SAJJAD, BASHA</au><au>AUGUSTYNIAK, EDWARD</au><au>BALDASSERONI, CHLOE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Low volume showerhead with faceplate holes for improved flow uniformity</title><date>2017-04-01</date><risdate>2017</risdate><abstract>A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.</abstract><oa>free_for_read</oa></addata></record>
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language chi ; eng
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subjects CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title Low volume showerhead with faceplate holes for improved flow uniformity
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T02%3A10%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PASQUALE,%20FRANK&rft.date=2017-04-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW201712144A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true