Resistive memory apparatus and writing method thereof

A resistive memory apparatus and a writing method thereof are provided. In the method, a logic data is received, and a corresponding resistive memory cell is selected. A logic level of the logic data is determined. When the logic data is in a first logic level, where a first reading current of the c...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN, FREDERICK, CHOU, CHUAN-SHENG, WANG, PING-KUN, LIAO, SHAOING, LIN, MENG-HUNG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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