Method for fabricating dynamic random access memory device

A method for fabricating a dynamic random access memory (DRAM) device is provided. Two separated masking layers are formed on a substrate. A material layer is conformably formed on the substrate with mask layers, such that the material layer between the mask layers has a recess region therein. Two s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TANAKA, YOSHINORI, CHIANG, MINGUNG, YEN, MAO-HSIANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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