Method for separating a carbon structure from a seed structure
The invention relates to a method for separating a carbon structure (1) deposited on a seed structure (2), for example graphene, carbon nanotubes or semiconductor nanowires, from the seed structure (2). In order to simplify the production of carbon structures, and in particular to provide a method i...
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| creator | JOUVRAY, ALEXANDRE TEO, KENNETH B. K MATHARU, JAI THOMAS, SIMON |
| description | The invention relates to a method for separating a carbon structure (1) deposited on a seed structure (2), for example graphene, carbon nanotubes or semiconductor nanowires, from the seed structure (2). In order to simplify the production of carbon structures, and in particular to provide a method in which the separation of the carbon structure from the seed structure proceeds within the process chamber in which the deposition takes place, it is proposed: preparing of a carbon structure deposited on a seed structure (2) in a process chamber of a CVD reactor; heating of the substrate comprising the seed structure (2) and the carbon structure (1) to a process temperature; injecting of at least one etching gas having the chemical formula AOmXn, AOmXnYp or AmXn, wherein A is selected from a group of elements that includes S, C and N, where O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero; converting of the seed structure (2) through a chemical react |
| format | Patent |
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K ; MATHARU, JAI ; THOMAS, SIMON</creatorcontrib><description>The invention relates to a method for separating a carbon structure (1) deposited on a seed structure (2), for example graphene, carbon nanotubes or semiconductor nanowires, from the seed structure (2). In order to simplify the production of carbon structures, and in particular to provide a method in which the separation of the carbon structure from the seed structure proceeds within the process chamber in which the deposition takes place, it is proposed: preparing of a carbon structure deposited on a seed structure (2) in a process chamber of a CVD reactor; heating of the substrate comprising the seed structure (2) and the carbon structure (1) to a process temperature; injecting of at least one etching gas having the chemical formula AOmXn, AOmXnYp or AmXn, wherein A is selected from a group of elements that includes S, C and N, where O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero; converting of the seed structure (2) through a chemical react</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161001&DB=EPODOC&CC=TW&NR=201634725A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161001&DB=EPODOC&CC=TW&NR=201634725A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JOUVRAY, ALEXANDRE</creatorcontrib><creatorcontrib>TEO, KENNETH B. 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In order to simplify the production of carbon structures, and in particular to provide a method in which the separation of the carbon structure from the seed structure proceeds within the process chamber in which the deposition takes place, it is proposed: preparing of a carbon structure deposited on a seed structure (2) in a process chamber of a CVD reactor; heating of the substrate comprising the seed structure (2) and the carbon structure (1) to a process temperature; injecting of at least one etching gas having the chemical formula AOmXn, AOmXnYp or AmXn, wherein A is selected from a group of elements that includes S, C and N, where O is oxygen, wherein X and Y are different halogens, and wherein m, n and p are natural numbers greater than zero; converting of the seed structure (2) through a chemical react</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method for separating a carbon structure from a seed structure |
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