Substrate processing apparatus and substrate processing method
Provided is a feature for inhibiting an unintentional treatment of a substrate from being performed after completion of a predetermined treatment of the substrate. This invention is provided with: a substrate support part for supporting a substrate in a treatment chamber; a treatment gas supply part...
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| creator | FUJIKURA, HAJIME NONAKA, TAKEHIRO NUMATA, TAKAYUKI KONNO, TAICHIRO |
| description | Provided is a feature for inhibiting an unintentional treatment of a substrate from being performed after completion of a predetermined treatment of the substrate. This invention is provided with: a substrate support part for supporting a substrate in a treatment chamber; a treatment gas supply part for supplying a treatment gas into the treatment chamber; and a movement mechanism for moving the substrate support part in the treatment chamber between a first position which is blasted with the treatment gas supplied from the treatment gas supply part and a second position which is not blasted with the treatment gas supplied from the treatment gas supply part. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW201633380A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW201633380A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW201633380A3</originalsourceid><addsrcrecordid>eNrjZLALLk0qLilKLElVKCjKT04tLs7MS1dILChIBIqVFisk5qUoFGNTkptakpGfwsPAmpaYU5zKC6W5GRTdXEOcPXRTC_LjU4sLEpNT81JL4kPCjQwMzYyNjS0MHI2JUQMA0kcxpg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Substrate processing apparatus and substrate processing method</title><source>esp@cenet</source><creator>FUJIKURA, HAJIME ; NONAKA, TAKEHIRO ; NUMATA, TAKAYUKI ; KONNO, TAICHIRO</creator><creatorcontrib>FUJIKURA, HAJIME ; NONAKA, TAKEHIRO ; NUMATA, TAKAYUKI ; KONNO, TAICHIRO</creatorcontrib><description>Provided is a feature for inhibiting an unintentional treatment of a substrate from being performed after completion of a predetermined treatment of the substrate. This invention is provided with: a substrate support part for supporting a substrate in a treatment chamber; a treatment gas supply part for supplying a treatment gas into the treatment chamber; and a movement mechanism for moving the substrate support part in the treatment chamber between a first position which is blasted with the treatment gas supplied from the treatment gas supply part and a second position which is not blasted with the treatment gas supplied from the treatment gas supply part.</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160916&DB=EPODOC&CC=TW&NR=201633380A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160916&DB=EPODOC&CC=TW&NR=201633380A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUJIKURA, HAJIME</creatorcontrib><creatorcontrib>NONAKA, TAKEHIRO</creatorcontrib><creatorcontrib>NUMATA, TAKAYUKI</creatorcontrib><creatorcontrib>KONNO, TAICHIRO</creatorcontrib><title>Substrate processing apparatus and substrate processing method</title><description>Provided is a feature for inhibiting an unintentional treatment of a substrate from being performed after completion of a predetermined treatment of the substrate. This invention is provided with: a substrate support part for supporting a substrate in a treatment chamber; a treatment gas supply part for supplying a treatment gas into the treatment chamber; and a movement mechanism for moving the substrate support part in the treatment chamber between a first position which is blasted with the treatment gas supplied from the treatment gas supply part and a second position which is not blasted with the treatment gas supplied from the treatment gas supply part.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALLk0qLilKLElVKCjKT04tLs7MS1dILChIBIqVFisk5qUoFGNTkptakpGfwsPAmpaYU5zKC6W5GRTdXEOcPXRTC_LjU4sLEpNT81JL4kPCjQwMzYyNjS0MHI2JUQMA0kcxpg</recordid><startdate>20160916</startdate><enddate>20160916</enddate><creator>FUJIKURA, HAJIME</creator><creator>NONAKA, TAKEHIRO</creator><creator>NUMATA, TAKAYUKI</creator><creator>KONNO, TAICHIRO</creator><scope>EVB</scope></search><sort><creationdate>20160916</creationdate><title>Substrate processing apparatus and substrate processing method</title><author>FUJIKURA, HAJIME ; NONAKA, TAKEHIRO ; NUMATA, TAKAYUKI ; KONNO, TAICHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201633380A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2016</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>FUJIKURA, HAJIME</creatorcontrib><creatorcontrib>NONAKA, TAKEHIRO</creatorcontrib><creatorcontrib>NUMATA, TAKAYUKI</creatorcontrib><creatorcontrib>KONNO, TAICHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUJIKURA, HAJIME</au><au>NONAKA, TAKEHIRO</au><au>NUMATA, TAKAYUKI</au><au>KONNO, TAICHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Substrate processing apparatus and substrate processing method</title><date>2016-09-16</date><risdate>2016</risdate><abstract>Provided is a feature for inhibiting an unintentional treatment of a substrate from being performed after completion of a predetermined treatment of the substrate. This invention is provided with: a substrate support part for supporting a substrate in a treatment chamber; a treatment gas supply part for supplying a treatment gas into the treatment chamber; and a movement mechanism for moving the substrate support part in the treatment chamber between a first position which is blasted with the treatment gas supplied from the treatment gas supply part and a second position which is not blasted with the treatment gas supplied from the treatment gas supply part.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
| recordid | cdi_epo_espacenet_TW201633380A |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Substrate processing apparatus and substrate processing method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T15%3A25%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FUJIKURA,%20HAJIME&rft.date=2016-09-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW201633380A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |