Plurality of sapphire single crystals and method of manufacturing same
Provided are a plurality of sapphire single crystals and a method of manufacturing the same that can prevent crystal defects by preventing flatting and improving heat balance by optimally setting the gap between dies or the gap between sapphire single crystals with respect to the thickness of the di...
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| creator | KOTAKI, TOSHIRO TAKAHASHI, MASAYUKI SATO, TSUGIO SAITO, HIRONORI HIGUCHI, KAZUTO |
| description | Provided are a plurality of sapphire single crystals and a method of manufacturing the same that can prevent crystal defects by preventing flatting and improving heat balance by optimally setting the gap between dies or the gap between sapphire single crystals with respect to the thickness of the dies or the maximum thickness of the plurality of sapphire single crystals. A plurality of sapphire single crystals are manufactured by: housing a plurality of dies, each having a slit, in a crucible; charging an aluminum oxide raw material into the crucible and heating the aluminum oxide raw material to form a molten pile of aluminum oxide above the slits; causing seed crystals to touch the molten pile and then withdrawing the seed crystals from the molten pile to grow a plurality of sapphire single crystals; and setting a gap D between the dies to 0.33 to 0.67 times the thickness t of the dies. A gap d between the plurality of sapphire single crystals is set to 0.33 to 0.67 times the maximum thickness tm of the sap |
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A plurality of sapphire single crystals are manufactured by: housing a plurality of dies, each having a slit, in a crucible; charging an aluminum oxide raw material into the crucible and heating the aluminum oxide raw material to form a molten pile of aluminum oxide above the slits; causing seed crystals to touch the molten pile and then withdrawing the seed crystals from the molten pile to grow a plurality of sapphire single crystals; and setting a gap D between the dies to 0.33 to 0.67 times the thickness t of the dies. 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A plurality of sapphire single crystals are manufactured by: housing a plurality of dies, each having a slit, in a crucible; charging an aluminum oxide raw material into the crucible and heating the aluminum oxide raw material to form a molten pile of aluminum oxide above the slits; causing seed crystals to touch the molten pile and then withdrawing the seed crystals from the molten pile to grow a plurality of sapphire single crystals; and setting a gap D between the dies to 0.33 to 0.67 times the thickness t of the dies. A gap d between the plurality of sapphire single crystals is set to 0.33 to 0.67 times the maximum thickness tm of the sap</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Plurality of sapphire single crystals and method of manufacturing same |
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