Flowable dielectric for selective ultra low-k pore sealing
Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such th...
Gespeichert in:
Hauptverfasser: | , , , , , , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | VAN SCHRAVENDIJK, BART J DRAEGER, NERISSA SUE KOLICS, ARTUR PADHI, DEENESH ZHAO, LIE ANTONELLI, GEORGE ANDREW WONG, DEREK B ASHTIANI, KAIHAN ABIDI VAN CLEEMPUT, PATRICK A |
description | Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW201623669A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW201623669A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW201623669A3</originalsourceid><addsrcrecordid>eNrjZLByy8kvT0zKSVVIyUzNSU0uKcpMVkjLL1IoBvMyy1IVSnNKihIVgMp0sxUK8otSgVKJOZl56TwMrGmJOcWpvFCam0HRzTXE2UM3tSA_PrW4IDE5NS-1JD4k3MjA0MzI2MzM0tGYGDUAerAvNQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Flowable dielectric for selective ultra low-k pore sealing</title><source>esp@cenet</source><creator>VAN SCHRAVENDIJK, BART J ; DRAEGER, NERISSA SUE ; KOLICS, ARTUR ; PADHI, DEENESH ; ZHAO, LIE ; ANTONELLI, GEORGE ANDREW ; WONG, DEREK B ; ASHTIANI, KAIHAN ABIDI ; VAN CLEEMPUT, PATRICK A</creator><creatorcontrib>VAN SCHRAVENDIJK, BART J ; DRAEGER, NERISSA SUE ; KOLICS, ARTUR ; PADHI, DEENESH ; ZHAO, LIE ; ANTONELLI, GEORGE ANDREW ; WONG, DEREK B ; ASHTIANI, KAIHAN ABIDI ; VAN CLEEMPUT, PATRICK A</creatorcontrib><description>Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160701&DB=EPODOC&CC=TW&NR=201623669A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160701&DB=EPODOC&CC=TW&NR=201623669A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VAN SCHRAVENDIJK, BART J</creatorcontrib><creatorcontrib>DRAEGER, NERISSA SUE</creatorcontrib><creatorcontrib>KOLICS, ARTUR</creatorcontrib><creatorcontrib>PADHI, DEENESH</creatorcontrib><creatorcontrib>ZHAO, LIE</creatorcontrib><creatorcontrib>ANTONELLI, GEORGE ANDREW</creatorcontrib><creatorcontrib>WONG, DEREK B</creatorcontrib><creatorcontrib>ASHTIANI, KAIHAN ABIDI</creatorcontrib><creatorcontrib>VAN CLEEMPUT, PATRICK A</creatorcontrib><title>Flowable dielectric for selective ultra low-k pore sealing</title><description>Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLByy8kvT0zKSVVIyUzNSU0uKcpMVkjLL1IoBvMyy1IVSnNKihIVgMp0sxUK8otSgVKJOZl56TwMrGmJOcWpvFCam0HRzTXE2UM3tSA_PrW4IDE5NS-1JD4k3MjA0MzI2MzM0tGYGDUAerAvNQ</recordid><startdate>20160701</startdate><enddate>20160701</enddate><creator>VAN SCHRAVENDIJK, BART J</creator><creator>DRAEGER, NERISSA SUE</creator><creator>KOLICS, ARTUR</creator><creator>PADHI, DEENESH</creator><creator>ZHAO, LIE</creator><creator>ANTONELLI, GEORGE ANDREW</creator><creator>WONG, DEREK B</creator><creator>ASHTIANI, KAIHAN ABIDI</creator><creator>VAN CLEEMPUT, PATRICK A</creator><scope>EVB</scope></search><sort><creationdate>20160701</creationdate><title>Flowable dielectric for selective ultra low-k pore sealing</title><author>VAN SCHRAVENDIJK, BART J ; DRAEGER, NERISSA SUE ; KOLICS, ARTUR ; PADHI, DEENESH ; ZHAO, LIE ; ANTONELLI, GEORGE ANDREW ; WONG, DEREK B ; ASHTIANI, KAIHAN ABIDI ; VAN CLEEMPUT, PATRICK A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201623669A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>VAN SCHRAVENDIJK, BART J</creatorcontrib><creatorcontrib>DRAEGER, NERISSA SUE</creatorcontrib><creatorcontrib>KOLICS, ARTUR</creatorcontrib><creatorcontrib>PADHI, DEENESH</creatorcontrib><creatorcontrib>ZHAO, LIE</creatorcontrib><creatorcontrib>ANTONELLI, GEORGE ANDREW</creatorcontrib><creatorcontrib>WONG, DEREK B</creatorcontrib><creatorcontrib>ASHTIANI, KAIHAN ABIDI</creatorcontrib><creatorcontrib>VAN CLEEMPUT, PATRICK A</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VAN SCHRAVENDIJK, BART J</au><au>DRAEGER, NERISSA SUE</au><au>KOLICS, ARTUR</au><au>PADHI, DEENESH</au><au>ZHAO, LIE</au><au>ANTONELLI, GEORGE ANDREW</au><au>WONG, DEREK B</au><au>ASHTIANI, KAIHAN ABIDI</au><au>VAN CLEEMPUT, PATRICK A</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Flowable dielectric for selective ultra low-k pore sealing</title><date>2016-07-01</date><risdate>2016</risdate><abstract>Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | chi ; eng |
recordid | cdi_epo_espacenet_TW201623669A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Flowable dielectric for selective ultra low-k pore sealing |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T00%3A22%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=VAN%20SCHRAVENDIJK,%20BART%20J&rft.date=2016-07-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW201623669A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |