Mirrortron sputtering device
Provided is a mirrortron sputtering device capable of reducing discharge voltage during sputtering to prevent occurrence of abnormal discharges, etc. and make continuous stable sputtering possible. This mirrortron sputtering device is equipped with a pair of target shields, which are disposed at the...
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| creator | AOE, KAZUNORI TANAKA, BUNPEI OHTA, KAZUKI TAO, EIJI SUENAGA, SHINGO HAMANAGA, NORIAKI |
| description | Provided is a mirrortron sputtering device capable of reducing discharge voltage during sputtering to prevent occurrence of abnormal discharges, etc. and make continuous stable sputtering possible. This mirrortron sputtering device is equipped with a pair of target shields, which are disposed at the outer edges of respective targets that are set inside a vacuum container or at positions near same on the magnetic field space-side of the respective targets so as to face the respective targets and which have an opening that faces the erosion region of the respective target. The respective target shields have an opening with a peripheral edge that roughly corresponds to the outer edge of the erosion region of the respective target and is located about 1-11 mm or about 3-5 mm to the outside of the outer edge of the erosion region in the radial direction or the longitudinal direction. |
| format | Patent |
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This mirrortron sputtering device is equipped with a pair of target shields, which are disposed at the outer edges of respective targets that are set inside a vacuum container or at positions near same on the magnetic field space-side of the respective targets so as to face the respective targets and which have an opening that faces the erosion region of the respective target. The respective target shields have an opening with a peripheral edge that roughly corresponds to the outer edge of the erosion region of the respective target and is located about 1-11 mm or about 3-5 mm to the outside of the outer edge of the erosion region in the radial direction or the longitudinal direction.</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160201&DB=EPODOC&CC=TW&NR=201604299A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160201&DB=EPODOC&CC=TW&NR=201604299A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AOE, KAZUNORI</creatorcontrib><creatorcontrib>TANAKA, BUNPEI</creatorcontrib><creatorcontrib>OHTA, KAZUKI</creatorcontrib><creatorcontrib>TAO, EIJI</creatorcontrib><creatorcontrib>SUENAGA, SHINGO</creatorcontrib><creatorcontrib>HAMANAGA, NORIAKI</creatorcontrib><title>Mirrortron sputtering device</title><description>Provided is a mirrortron sputtering device capable of reducing discharge voltage during sputtering to prevent occurrence of abnormal discharges, etc. and make continuous stable sputtering possible. This mirrortron sputtering device is equipped with a pair of target shields, which are disposed at the outer edges of respective targets that are set inside a vacuum container or at positions near same on the magnetic field space-side of the respective targets so as to face the respective targets and which have an opening that faces the erosion region of the respective target. The respective target shields have an opening with a peripheral edge that roughly corresponds to the outer edge of the erosion region of the respective target and is located about 1-11 mm or about 3-5 mm to the outside of the outer edge of the erosion region in the radial direction or the longitudinal direction.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDxzSwqyi8qKcrPUyguKC0pSS3KzEtXSEkty0xO5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8SHhRgaGZgYmRpaWjsbEqAEA3yQkfA</recordid><startdate>20160201</startdate><enddate>20160201</enddate><creator>AOE, KAZUNORI</creator><creator>TANAKA, BUNPEI</creator><creator>OHTA, KAZUKI</creator><creator>TAO, EIJI</creator><creator>SUENAGA, SHINGO</creator><creator>HAMANAGA, NORIAKI</creator><scope>EVB</scope></search><sort><creationdate>20160201</creationdate><title>Mirrortron sputtering device</title><author>AOE, KAZUNORI ; TANAKA, BUNPEI ; OHTA, KAZUKI ; TAO, EIJI ; SUENAGA, SHINGO ; HAMANAGA, NORIAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201604299A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2016</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>AOE, KAZUNORI</creatorcontrib><creatorcontrib>TANAKA, BUNPEI</creatorcontrib><creatorcontrib>OHTA, KAZUKI</creatorcontrib><creatorcontrib>TAO, EIJI</creatorcontrib><creatorcontrib>SUENAGA, SHINGO</creatorcontrib><creatorcontrib>HAMANAGA, NORIAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AOE, KAZUNORI</au><au>TANAKA, BUNPEI</au><au>OHTA, KAZUKI</au><au>TAO, EIJI</au><au>SUENAGA, SHINGO</au><au>HAMANAGA, NORIAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Mirrortron sputtering device</title><date>2016-02-01</date><risdate>2016</risdate><abstract>Provided is a mirrortron sputtering device capable of reducing discharge voltage during sputtering to prevent occurrence of abnormal discharges, etc. and make continuous stable sputtering possible. This mirrortron sputtering device is equipped with a pair of target shields, which are disposed at the outer edges of respective targets that are set inside a vacuum container or at positions near same on the magnetic field space-side of the respective targets so as to face the respective targets and which have an opening that faces the erosion region of the respective target. The respective target shields have an opening with a peripheral edge that roughly corresponds to the outer edge of the erosion region of the respective target and is located about 1-11 mm or about 3-5 mm to the outside of the outer edge of the erosion region in the radial direction or the longitudinal direction.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
| recordid | cdi_epo_espacenet_TW201604299A |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Mirrortron sputtering device |
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