Method for processing substrate
Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) con...
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| creator | WHITE, RICHARD M DANIELS, KEVIN M KOO, BON-WOONG RADOVANOV, SVETLANA B COBB, ERIC R PITMAN, DAVID W |
| description | Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate. |
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In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131101&DB=EPODOC&CC=TW&NR=201344765A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131101&DB=EPODOC&CC=TW&NR=201344765A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WHITE, RICHARD M</creatorcontrib><creatorcontrib>DANIELS, KEVIN M</creatorcontrib><creatorcontrib>KOO, BON-WOONG</creatorcontrib><creatorcontrib>RADOVANOV, SVETLANA B</creatorcontrib><creatorcontrib>COBB, ERIC R</creatorcontrib><creatorcontrib>PITMAN, DAVID W</creatorcontrib><title>Method for processing substrate</title><description>Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD3TS3JyE9RSMsvUigoyk9OLS7OzEtXKC5NKi4pSixJ5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8SHhRgaGxiYm5mamjsbEqAEARaMlXA</recordid><startdate>20131101</startdate><enddate>20131101</enddate><creator>WHITE, RICHARD M</creator><creator>DANIELS, KEVIN M</creator><creator>KOO, BON-WOONG</creator><creator>RADOVANOV, SVETLANA B</creator><creator>COBB, ERIC R</creator><creator>PITMAN, DAVID W</creator><scope>EVB</scope></search><sort><creationdate>20131101</creationdate><title>Method for processing substrate</title><author>WHITE, RICHARD M ; DANIELS, KEVIN M ; KOO, BON-WOONG ; RADOVANOV, SVETLANA B ; COBB, ERIC R ; PITMAN, DAVID W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201344765A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WHITE, RICHARD M</creatorcontrib><creatorcontrib>DANIELS, KEVIN M</creatorcontrib><creatorcontrib>KOO, BON-WOONG</creatorcontrib><creatorcontrib>RADOVANOV, SVETLANA B</creatorcontrib><creatorcontrib>COBB, ERIC R</creatorcontrib><creatorcontrib>PITMAN, DAVID W</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WHITE, RICHARD M</au><au>DANIELS, KEVIN M</au><au>KOO, BON-WOONG</au><au>RADOVANOV, SVETLANA B</au><au>COBB, ERIC R</au><au>PITMAN, DAVID W</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for processing substrate</title><date>2013-11-01</date><risdate>2013</risdate><abstract>Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method for processing substrate |
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