Methods and apparatus for processing substrates using model-based control
Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first s...
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creator | PORTHOUSE, KEITH BRIAN DZILNO, DMITRY A MINKOVICH, ALEX LI, HONG-BIN RICE, MICHAEL R LANE, JOHN W GREGOR, MARIUSCH MERRY, NIR |
description | Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state. |
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In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CONTROL OR REGULATING SYSTEMS IN GENERAL ; CONTROLLING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS ; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS ; PHYSICS ; REGULATING ; SEMICONDUCTOR DEVICES ; SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130516&DB=EPODOC&CC=TW&NR=201320148A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130516&DB=EPODOC&CC=TW&NR=201320148A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PORTHOUSE, KEITH BRIAN</creatorcontrib><creatorcontrib>DZILNO, DMITRY A</creatorcontrib><creatorcontrib>MINKOVICH, ALEX</creatorcontrib><creatorcontrib>LI, HONG-BIN</creatorcontrib><creatorcontrib>RICE, MICHAEL R</creatorcontrib><creatorcontrib>LANE, JOHN W</creatorcontrib><creatorcontrib>GREGOR, MARIUSCH</creatorcontrib><creatorcontrib>MERRY, NIR</creatorcontrib><title>Methods and apparatus for processing substrates using model-based control</title><description>Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONTROL OR REGULATING SYSTEMS IN GENERAL</subject><subject>CONTROLLING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FUNCTIONAL ELEMENTS OF SUCH SYSTEMS</subject><subject>MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS</subject><subject>PHYSICS</subject><subject>REGULATING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD0TS3JyE8pVkjMS1FILChILEosKS1WSMsvUigoyk9OLS7OzEtXKC5NKi4ByqQWK5SCBXLzU1JzdJMSi1NTFJLz80qK8nN4GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8SLiRgaExEJtYOBoTowYAKlw1Xg</recordid><startdate>20130516</startdate><enddate>20130516</enddate><creator>PORTHOUSE, KEITH BRIAN</creator><creator>DZILNO, DMITRY A</creator><creator>MINKOVICH, ALEX</creator><creator>LI, HONG-BIN</creator><creator>RICE, MICHAEL R</creator><creator>LANE, JOHN W</creator><creator>GREGOR, MARIUSCH</creator><creator>MERRY, NIR</creator><scope>EVB</scope></search><sort><creationdate>20130516</creationdate><title>Methods and apparatus for processing substrates using model-based control</title><author>PORTHOUSE, KEITH BRIAN ; DZILNO, DMITRY A ; MINKOVICH, ALEX ; LI, HONG-BIN ; RICE, MICHAEL R ; LANE, JOHN W ; GREGOR, MARIUSCH ; MERRY, NIR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201320148A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CONTROL OR REGULATING SYSTEMS IN GENERAL</topic><topic>CONTROLLING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FUNCTIONAL ELEMENTS OF SUCH SYSTEMS</topic><topic>MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS</topic><topic>PHYSICS</topic><topic>REGULATING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES</topic><toplevel>online_resources</toplevel><creatorcontrib>PORTHOUSE, KEITH BRIAN</creatorcontrib><creatorcontrib>DZILNO, DMITRY A</creatorcontrib><creatorcontrib>MINKOVICH, ALEX</creatorcontrib><creatorcontrib>LI, HONG-BIN</creatorcontrib><creatorcontrib>RICE, MICHAEL R</creatorcontrib><creatorcontrib>LANE, JOHN W</creatorcontrib><creatorcontrib>GREGOR, MARIUSCH</creatorcontrib><creatorcontrib>MERRY, NIR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PORTHOUSE, KEITH BRIAN</au><au>DZILNO, DMITRY A</au><au>MINKOVICH, ALEX</au><au>LI, HONG-BIN</au><au>RICE, MICHAEL R</au><au>LANE, JOHN W</au><au>GREGOR, MARIUSCH</au><au>MERRY, NIR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods and apparatus for processing substrates using model-based control</title><date>2013-05-16</date><risdate>2013</risdate><abstract>Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | BASIC ELECTRIC ELEMENTS CONTROL OR REGULATING SYSTEMS IN GENERAL CONTROLLING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FUNCTIONAL ELEMENTS OF SUCH SYSTEMS MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS PHYSICS REGULATING SEMICONDUCTOR DEVICES SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES |
title | Methods and apparatus for processing substrates using model-based control |
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