Apparatus and method of using impedance resonance sensor for thickness measurement

An apparatus for, and methods of use for, measuring film thickness on an underlying body are provided. The apparatus may include at least one Impedance Resonance (IR) sensor, which may include at least one sensing head. The at least one sensing head may include an inductor having at least one excita...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: FAUSS, MATTHEW, NIKOLENKO, YURY
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator FAUSS, MATTHEW
NIKOLENKO, YURY
description An apparatus for, and methods of use for, measuring film thickness on an underlying body are provided. The apparatus may include at least one Impedance Resonance (IR) sensor, which may include at least one sensing head. The at least one sensing head may include an inductor having at least one excitation coil and at least one sensing coil. The excitation coil may propagate energy to the sensing coil so that the sensing coil may generate a probing electromagnetic field. The apparatus may also include at least one power supply, at least one RF sweep generator electrically connected to the excitation coil; at least one data acquisition block electrically connected to the sensing coil; at least one calculation block; and at least one communication block. Methods of monitoring conductive, semiconductive or non-conductive film thickness, and various tools for Chemical Mechanical Polishing/Planarization (CMP), etching, deposition and stand-alone metrology are also provided.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW201300733A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW201300733A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW201300733A3</originalsourceid><addsrcrecordid>eNqNi0EKwjAQRbtxIeodxgMI0SxcF1FcS8FlGZIfW2onIZPc3yIewMXnvcX76-bRpsSZS1Vi8TSjDNFTDFR1lBeNc4JncaAMjfI1hWjMFJaVYXSTQHU5staMGVK2zSrwW7H7cdPsb9fucj8gxR6a2EFQ-u55MkdrzNna1v7TfABL4ziq</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Apparatus and method of using impedance resonance sensor for thickness measurement</title><source>esp@cenet</source><creator>FAUSS, MATTHEW ; NIKOLENKO, YURY</creator><creatorcontrib>FAUSS, MATTHEW ; NIKOLENKO, YURY</creatorcontrib><description>An apparatus for, and methods of use for, measuring film thickness on an underlying body are provided. The apparatus may include at least one Impedance Resonance (IR) sensor, which may include at least one sensing head. The at least one sensing head may include an inductor having at least one excitation coil and at least one sensing coil. The excitation coil may propagate energy to the sensing coil so that the sensing coil may generate a probing electromagnetic field. The apparatus may also include at least one power supply, at least one RF sweep generator electrically connected to the excitation coil; at least one data acquisition block electrically connected to the sensing coil; at least one calculation block; and at least one communication block. Methods of monitoring conductive, semiconductive or non-conductive film thickness, and various tools for Chemical Mechanical Polishing/Planarization (CMP), etching, deposition and stand-alone metrology are also provided.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; PERFORMING OPERATIONS ; PHYSICS ; POLISHING ; SEMICONDUCTOR DEVICES ; TESTING ; TRANSPORTING</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130101&amp;DB=EPODOC&amp;CC=TW&amp;NR=201300733A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130101&amp;DB=EPODOC&amp;CC=TW&amp;NR=201300733A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FAUSS, MATTHEW</creatorcontrib><creatorcontrib>NIKOLENKO, YURY</creatorcontrib><title>Apparatus and method of using impedance resonance sensor for thickness measurement</title><description>An apparatus for, and methods of use for, measuring film thickness on an underlying body are provided. The apparatus may include at least one Impedance Resonance (IR) sensor, which may include at least one sensing head. The at least one sensing head may include an inductor having at least one excitation coil and at least one sensing coil. The excitation coil may propagate energy to the sensing coil so that the sensing coil may generate a probing electromagnetic field. The apparatus may also include at least one power supply, at least one RF sweep generator electrically connected to the excitation coil; at least one data acquisition block electrically connected to the sensing coil; at least one calculation block; and at least one communication block. Methods of monitoring conductive, semiconductive or non-conductive film thickness, and various tools for Chemical Mechanical Polishing/Planarization (CMP), etching, deposition and stand-alone metrology are also provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi0EKwjAQRbtxIeodxgMI0SxcF1FcS8FlGZIfW2onIZPc3yIewMXnvcX76-bRpsSZS1Vi8TSjDNFTDFR1lBeNc4JncaAMjfI1hWjMFJaVYXSTQHU5staMGVK2zSrwW7H7cdPsb9fucj8gxR6a2EFQ-u55MkdrzNna1v7TfABL4ziq</recordid><startdate>20130101</startdate><enddate>20130101</enddate><creator>FAUSS, MATTHEW</creator><creator>NIKOLENKO, YURY</creator><scope>EVB</scope></search><sort><creationdate>20130101</creationdate><title>Apparatus and method of using impedance resonance sensor for thickness measurement</title><author>FAUSS, MATTHEW ; NIKOLENKO, YURY</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201300733A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>FAUSS, MATTHEW</creatorcontrib><creatorcontrib>NIKOLENKO, YURY</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FAUSS, MATTHEW</au><au>NIKOLENKO, YURY</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Apparatus and method of using impedance resonance sensor for thickness measurement</title><date>2013-01-01</date><risdate>2013</risdate><abstract>An apparatus for, and methods of use for, measuring film thickness on an underlying body are provided. The apparatus may include at least one Impedance Resonance (IR) sensor, which may include at least one sensing head. The at least one sensing head may include an inductor having at least one excitation coil and at least one sensing coil. The excitation coil may propagate energy to the sensing coil so that the sensing coil may generate a probing electromagnetic field. The apparatus may also include at least one power supply, at least one RF sweep generator electrically connected to the excitation coil; at least one data acquisition block electrically connected to the sensing coil; at least one calculation block; and at least one communication block. Methods of monitoring conductive, semiconductive or non-conductive film thickness, and various tools for Chemical Mechanical Polishing/Planarization (CMP), etching, deposition and stand-alone metrology are also provided.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_TW201300733A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
PERFORMING OPERATIONS
PHYSICS
POLISHING
SEMICONDUCTOR DEVICES
TESTING
TRANSPORTING
title Apparatus and method of using impedance resonance sensor for thickness measurement
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T02%3A34%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FAUSS,%20MATTHEW&rft.date=2013-01-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW201300733A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true