Thin film transistor and method for fabricating the same
A method for fabricating a thin film transistor is provided, including following steps. Form a gate on a substrate. Form a gate insulating layer, a semiconductor oxide material layer and a conductive layer on the substrate in sequence. Form a patterned photoresist layer on the conductive layer. The...
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| creator | KAO, YIHYUN LIN, CHUN-NAN CHEN, HUIUN WU, SHU-FENG |
| description | A method for fabricating a thin film transistor is provided, including following steps. Form a gate on a substrate. Form a gate insulating layer, a semiconductor oxide material layer and a conductive layer on the substrate in sequence. Form a patterned photoresist layer on the conductive layer. The patterned photoresist layer includes two first parts, and a second part connecting between the first parts. Thickness of each first part is greater than that of the second part. Remove the conductive layer and the semiconductor oxide material layer that are not covered by the patterned photoresist layer by using the patterned photoresist layer as a mask, so that a semiconductor oxide channel layer and a patterned conductive layer between the semiconductor oxide channel layer and the patterned photoresist layer are formed. Remove a portion of the patterned photoresist layer so as to lower the thickness of the first parts until the second part. Remove the patterned conductive layer not covered by the remaining first |
| format | Patent |
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| title | Thin film transistor and method for fabricating the same |
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