Method of forming openings in a semiconductor device and semiconductor device

A method of forming openings (26) to a layer (4, 6, 14) of a semiconductor device comprises forming a dielectric layer (20) over the layer of the semiconductor device, and forming a mask (23) over the dielectric layer. The mask comprises a plurality of mask openings (24, 25) arranged in a regular pa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: AMINPUR, MASSUD ABUBAKER, CONLEY, WILL, WARRICK, SCOTT, RIVIERE-CAZEAUX, LIONEL
Format: Patent
Sprache:chi ; eng
Schlagworte:
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