Chemical vapor deposited silicon carbide articles

Chemical vapor deposited silicon carbide articles

Chemical vapor deposited silicon carbide articles and the methods of making them are disclosed. The chemical vapor deposited silicon carbide articles are composed of multiple parts which are joined together by sintered ceramic joints. The joints strengthen and maintain tolerances at the joints of th...

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Hauptverfasser: PICKERING, MICHAEL A, MAYER, JAMIE L, LAIS, KEVIN D
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator PICKERING, MICHAEL A
MAYER, JAMIE L
LAIS, KEVIN D
description Chemical vapor deposited silicon carbide articles and the methods of making them are disclosed. The chemical vapor deposited silicon carbide articles are composed of multiple parts which are joined together by sintered ceramic joints. The joints strengthen and maintain tolerances at the joints of the articles. The articles may be used in semi-conductor processing.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Chemical vapor deposited silicon carbide articles
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