Method for forming a strained channel in a semiconductor device

A method for forming a strained channel in a semiconductor device is provided, comprising providing of a transistor comprising a gate stack exposed with a gate electrode in a semiconductor substrate, a pair of source/drain regions in the substrate on opposite sides of the gate stack and a spacer on...

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Hauptverfasser:	CHEN, YUN-HSIU, PAN, KUO-HUA, LIN, YIING, JANG, SYUN-MING, LIAO, KEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	CHEN, YUN-HSIU PAN, KUO-HUA LIN, YIING JANG, SYUN-MING LIAO, KEN
description	A method for forming a strained channel in a semiconductor device is provided, comprising providing of a transistor comprising a gate stack exposed with a gate electrode in a semiconductor substrate, a pair of source/drain regions in the substrate on opposite sides of the gate stack and a spacer on opposing sidewalls of the gate stack. A passivation layer is formed to cover the gate electrode and the spacer. A recess region is formed in each of the source/drain regions, wherein an edge of the recess region aligns to an outer edge of the spacer. The recess regions are filled with a strain-exerting material, thereby forming a strained channel region in the semiconductor substrate between the source/drain regions.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW200822235A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW200822235A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW200822235A3</originalsourceid><addsrcrecordid>eNrjZLD3TS3JyE9RSMsvAuHczLx0hUSF4pKixMy81BSF5IzEvLzUHIXMPJBoam5mcn5eSmlyCVB1SmpZZnIqDwNrWmJOcSovlOZmUHRzDXH20E0tyI9PLS5ITE7NSy2JDwk3MjCwMDIyMjZ1NCZGDQBqTjC_</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for forming a strained channel in a semiconductor device</title><source>esp@cenet</source><creator>CHEN, YUN-HSIU ; PAN, KUO-HUA ; LIN, YIING ; JANG, SYUN-MING ; LIAO, KEN</creator><creatorcontrib>CHEN, YUN-HSIU ; PAN, KUO-HUA ; LIN, YIING ; JANG, SYUN-MING ; LIAO, KEN</creatorcontrib><description>A method for forming a strained channel in a semiconductor device is provided, comprising providing of a transistor comprising a gate stack exposed with a gate electrode in a semiconductor substrate, a pair of source/drain regions in the substrate on opposite sides of the gate stack and a spacer on opposing sidewalls of the gate stack. A passivation layer is formed to cover the gate electrode and the spacer. A recess region is formed in each of the source/drain regions, wherein an edge of the recess region aligns to an outer edge of the spacer. The recess regions are filled with a strain-exerting material, thereby forming a strained channel region in the semiconductor substrate between the source/drain regions.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080516&DB=EPODOC&CC=TW&NR=200822235A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080516&DB=EPODOC&CC=TW&NR=200822235A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN, YUN-HSIU</creatorcontrib><creatorcontrib>PAN, KUO-HUA</creatorcontrib><creatorcontrib>LIN, YIING</creatorcontrib><creatorcontrib>JANG, SYUN-MING</creatorcontrib><creatorcontrib>LIAO, KEN</creatorcontrib><title>Method for forming a strained channel in a semiconductor device</title><description>A method for forming a strained channel in a semiconductor device is provided, comprising providing of a transistor comprising a gate stack exposed with a gate electrode in a semiconductor substrate, a pair of source/drain regions in the substrate on opposite sides of the gate stack and a spacer on opposing sidewalls of the gate stack. A passivation layer is formed to cover the gate electrode and the spacer. A recess region is formed in each of the source/drain regions, wherein an edge of the recess region aligns to an outer edge of the spacer. The recess regions are filled with a strain-exerting material, thereby forming a strained channel region in the semiconductor substrate between the source/drain regions.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD3TS3JyE9RSMsvAuHczLx0hUSF4pKixMy81BSF5IzEvLzUHIXMPJBoam5mcn5eSmlyCVB1SmpZZnIqDwNrWmJOcSovlOZmUHRzDXH20E0tyI9PLS5ITE7NSy2JDwk3MjCwMDIyMjZ1NCZGDQBqTjC_</recordid><startdate>20080516</startdate><enddate>20080516</enddate><creator>CHEN, YUN-HSIU</creator><creator>PAN, KUO-HUA</creator><creator>LIN, YIING</creator><creator>JANG, SYUN-MING</creator><creator>LIAO, KEN</creator><scope>EVB</scope></search><sort><creationdate>20080516</creationdate><title>Method for forming a strained channel in a semiconductor device</title><author>CHEN, YUN-HSIU ; PAN, KUO-HUA ; LIN, YIING ; JANG, SYUN-MING ; LIAO, KEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW200822235A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN, YUN-HSIU</creatorcontrib><creatorcontrib>PAN, KUO-HUA</creatorcontrib><creatorcontrib>LIN, YIING</creatorcontrib><creatorcontrib>JANG, SYUN-MING</creatorcontrib><creatorcontrib>LIAO, KEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN, YUN-HSIU</au><au>PAN, KUO-HUA</au><au>LIN, YIING</au><au>JANG, SYUN-MING</au><au>LIAO, KEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for forming a strained channel in a semiconductor device</title><date>2008-05-16</date><risdate>2008</risdate><abstract>A method for forming a strained channel in a semiconductor device is provided, comprising providing of a transistor comprising a gate stack exposed with a gate electrode in a semiconductor substrate, a pair of source/drain regions in the substrate on opposite sides of the gate stack and a spacer on opposing sidewalls of the gate stack. A passivation layer is formed to cover the gate electrode and the spacer. A recess region is formed in each of the source/drain regions, wherein an edge of the recess region aligns to an outer edge of the spacer. The recess regions are filled with a strain-exerting material, thereby forming a strained channel region in the semiconductor substrate between the source/drain regions.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Method for forming a strained channel in a semiconductor device
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T19%3A18%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHEN,%20YUN-HSIU&rft.date=2008-05-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW200822235A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true