Method of fabricating a MOSFET transistor having an anti-halo for modifying narrow width device performance
A method including forming a transistor structure structure comprising a gate electrode over an active region of a substrate, the active region defined by a trench isolation structure and changing a performance of a narrow width transistor with respect to a wide width transistor by introducing a dop...
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| creator | LINDERT, NICK TYAGI, SUNIT PIPES, LEONARD C SHAHEED, REAZ M CURELLO, GIUSEPPE MUDANAI, SIVAKUMAR P |
| description | A method including forming a transistor structure structure comprising a gate electrode over an active region of a substrate, the active region defined by a trench isolation structure and changing a performance of a narrow width transistor with respect to a wide width transistor by introducing a dopant into the active region adjacent an interface defined by the trench isolation structure and the gate electrode. A structure including a gate electrode formed on a substrate, an active region adjacent an interface defined by a trench isolation structure and a gate electrode and an implant within the active region to change a performance of a transistor. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method of fabricating a MOSFET transistor having an anti-halo for modifying narrow width device performance |
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