Making method of semiconductor apparatus

Making method of semiconductor apparatus

The topic of this invention is making electric conduction film using tungsten as major ingredient to embed finely in the silicon wafer at the interior of electric conduction trough with high aspect ratio. The invention embeds the tungsten film 43 in the silicon wafer W2 and the upper portion of the...

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Hauptverfasser: KATAGIRI, NAMIO, OTAGURO, AKIRA, MIYAKAWA, NOBUAKI, TAKAHIRA, YOSHIYA, OTAKE, MANABU, SAITO, TOSHIO
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KATAGIRI, NAMIO
OTAGURO, AKIRA
MIYAKAWA, NOBUAKI
TAKAHIRA, YOSHIYA
OTAKE, MANABU
SAITO, TOSHIO
description The topic of this invention is making electric conduction film using tungsten as major ingredient to embed finely in the silicon wafer at the interior of electric conduction trough with high aspect ratio. The invention embeds the tungsten film 43 in the silicon wafer W2 and the upper portion of the silicon oxide film 36 in interior of electric conduction trough 4A. It carries out tungsten film 43 forming and etching back in the same cavity chamber of apparatus continuously. The film thickness of tungsten film 43 will deposit thinner in film forming step at a time. It can avoid the problems of peeling off tungsten film 43, producing micro crack, occurring warp in wafer W2, or cracking.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Making method of semiconductor apparatus
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