A photosensitive integrated circuit and fabrication method thereof

Described are microlens designs to increase quantum efficiency and improve photonic performance of photosensitive integrated circuit device. A photosensitive integrated circuit made up of photodiodes, dielectric layers, metal contact holes, metal layers, and passivation stacks are formed on a semico...

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Bibliographische Detailangaben
1. Verfasser: WU, TIENI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Described are microlens designs to increase quantum efficiency and improve photonic performance of photosensitive integrated circuit device. A photosensitive integrated circuit made up of photodiodes, dielectric layers, metal contact holes, metal layers, and passivation stacks are formed on a semiconductor substrate. Microlenses are then formed over these encapsulating layers, the microlenses comprising non-planar surfaces, in particular a biconvex microlens formed above the photodiodes to direct, deliver/and focus incident light to the photodiodes for increased quantum efficiency and improved photonic performance. Color filters are then formed over the microlenses and the photodiodes so as to filter specific wavelengths of light.