Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control
An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry th...
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Sprache: | chi ; eng |
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