Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control

An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CUMMINGS, JAMES J, ENGLAND, JONATHAN, CALLAHAN, THOMAS B, TIMBERLAKE, DAVID R, MCLANE, JAMES R, SAUNDERS, MARK D, LOW, RUSSELL J, OLSON, JOSEPH C
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!