Copper plating of semiconductor devices using intermediate immersion step

A method of electroplating a metal layer on a semiconductor device includes a sequence of biasing operations that includes a first electroplating step at a first current density followed by a second immersion step at a second current density being less than the first current density, and subsequent...

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Bibliographische Detailangaben

Hauptverfasser:	WANG, YING-LUNG, SU, CHINGHWANQ, SUNG, SHANG CHIN, CHEN, KEI-WEI, LIN, SHIH-HO, CHEN, CHAO-LUNG, LIN, YU-KU, SHIH, PO JEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES
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