Semiconductor devices having different gate dielectrics and methods for manufacturing the same
A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includ...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | LEE, JONG-HO KANG, HO-KYU KIM, YUN-SEOK JUNG, HYUNG-SUK DOH, SEOK-JO |
| description | A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW200524013A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW200524013A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW200524013A3</originalsourceid><addsrcrecordid>eNqNi0EKwjAQRbtxIeodxgMItdUDiCjuLbizDJOfNtAkJZn2_FbwAK4eD95bF-8nvJMYzCQaExnMTpCp59mFjoyzFglBqWPFohggmpxk4mDIQ_toMtnl9Bwmy6JT-o7agzJ7bIuV5SFj9-Om2N9vzfVxwBhb5JEFAdo2r6osz9WpPNaX-p_mA43XPSY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor devices having different gate dielectrics and methods for manufacturing the same</title><source>esp@cenet</source><creator>LEE, JONG-HO ; KANG, HO-KYU ; KIM, YUN-SEOK ; JUNG, HYUNG-SUK ; DOH, SEOK-JO</creator><creatorcontrib>LEE, JONG-HO ; KANG, HO-KYU ; KIM, YUN-SEOK ; JUNG, HYUNG-SUK ; DOH, SEOK-JO</creatorcontrib><description>A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050716&DB=EPODOC&CC=TW&NR=200524013A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050716&DB=EPODOC&CC=TW&NR=200524013A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, JONG-HO</creatorcontrib><creatorcontrib>KANG, HO-KYU</creatorcontrib><creatorcontrib>KIM, YUN-SEOK</creatorcontrib><creatorcontrib>JUNG, HYUNG-SUK</creatorcontrib><creatorcontrib>DOH, SEOK-JO</creatorcontrib><title>Semiconductor devices having different gate dielectrics and methods for manufacturing the same</title><description>A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi0EKwjAQRbtxIeodxgMItdUDiCjuLbizDJOfNtAkJZn2_FbwAK4eD95bF-8nvJMYzCQaExnMTpCp59mFjoyzFglBqWPFohggmpxk4mDIQ_toMtnl9Bwmy6JT-o7agzJ7bIuV5SFj9-Om2N9vzfVxwBhb5JEFAdo2r6osz9WpPNaX-p_mA43XPSY</recordid><startdate>20050716</startdate><enddate>20050716</enddate><creator>LEE, JONG-HO</creator><creator>KANG, HO-KYU</creator><creator>KIM, YUN-SEOK</creator><creator>JUNG, HYUNG-SUK</creator><creator>DOH, SEOK-JO</creator><scope>EVB</scope></search><sort><creationdate>20050716</creationdate><title>Semiconductor devices having different gate dielectrics and methods for manufacturing the same</title><author>LEE, JONG-HO ; KANG, HO-KYU ; KIM, YUN-SEOK ; JUNG, HYUNG-SUK ; DOH, SEOK-JO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW200524013A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, JONG-HO</creatorcontrib><creatorcontrib>KANG, HO-KYU</creatorcontrib><creatorcontrib>KIM, YUN-SEOK</creatorcontrib><creatorcontrib>JUNG, HYUNG-SUK</creatorcontrib><creatorcontrib>DOH, SEOK-JO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, JONG-HO</au><au>KANG, HO-KYU</au><au>KIM, YUN-SEOK</au><au>JUNG, HYUNG-SUK</au><au>DOH, SEOK-JO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor devices having different gate dielectrics and methods for manufacturing the same</title><date>2005-07-16</date><risdate>2005</risdate><abstract>A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_TW200524013A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor devices having different gate dielectrics and methods for manufacturing the same |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T00%3A24%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LEE,%20JONG-HO&rft.date=2005-07-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW200524013A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |