Salicided MOS device and one-sided salicided MOS device, and simultaneous fabrication method thereof

A method of fabricating a salicided MOS and a one-sided salicided MOS device on a semiconductor substrate. A conformal oxide layer and an organic layer are sequentially formed on first and second MOS devices and the substrate. The first MOS has a first gate structure, a first spacer and first and se...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN, HOING, YAUNG, DUN-NIAN, WU, SHOU-GWO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!