A flexible hybrid memory element

The invention includes a memory cell apparatus, and a method of forming the memory cell. The memory cell apparatus includes a flexible hybrid memory element. The flexible hybrid memory element includes a flexible first conductive layer [320] formed adjacent to a flexible substrate [310]. A flexible...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	PERLOV, CRAIG, TAUSSIG, CARL PHILIP, JACKSON, WARREN B
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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Beschreibung
Zusammenfassung:	The invention includes a memory cell apparatus, and a method of forming the memory cell. The memory cell apparatus includes a flexible hybrid memory element. The flexible hybrid memory element includes a flexible first conductive layer [320] formed adjacent to a flexible substrate [310]. A flexible diode structure [330] is formed adjacent to the flexible first conductor [320]. A flexible switch [350] is formed adjacent to the flexible diode structure [330]. A flexible second conductive layer [360] is formed adjacent to the flexible switch [350]. The flexible switch [350] is generally formed from an organic material. The flexible diode structure [330] is generally formed from a disordered, inorganic material. The flexible switch [350] can be formed to create a high resistance path when a threshold amount of current is passed through the flexible switch [330], or the flexible switch [330] can be formed to create a low resistance path when a threshold amount of current is passed through the flexible switch [330]