Self-aligned pattern formation using dual wavelengths

An integrated circuit fabrication process for patterning features at sublithographic dimensions is disclosed herein. The process includes sequentially exposing a of a film of arylalkoxysilane with a photobase generator, and catalytic amount of water coated on top of a conventional lipophilic photore...

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Bibliographische Detailangaben
Hauptverfasser: OKOROANYANWU, UZODINMA, BOTTELLI, ARMANDO C
Format: Patent
Sprache:chi ; eng
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