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creator SHAKHOVTSOV V.I.,SU
RUDENKO M.I.,SU
ATROSHCHENKO L.V.,SU
KOSHKIN V.M.,SU
GALCHINETSKIJ L.P.,SU
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_SU293395A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>SU293395A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_SU293395A13</originalsourceid><addsrcrecordid>eNrjZFByDooMDnH08fH0c1UIdvX1dPb3cwl1DvEPUvB1DHEN8nT04WFgTUvMKU7lhdLcDPJuriHOHrqpBfnxqcUFicmpeakl8cGhRpbGxpamjobGhFUAAN3HIis</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CRYSTALLINE SEMICONDUCTOR MATERIAL</title><source>esp@cenet</source><creator>SHAKHOVTSOV V.I.,SU ; RUDENKO M.I.,SU ; ATROSHCHENKO L.V.,SU ; KOSHKIN V.M.,SU ; GALCHINETSKIJ L.P.,SU</creator><creatorcontrib>SHAKHOVTSOV V.I.,SU ; RUDENKO M.I.,SU ; ATROSHCHENKO L.V.,SU ; KOSHKIN V.M.,SU ; GALCHINETSKIJ L.P.,SU</creatorcontrib><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; DECONTAMINATION ARRANGEMENTS THEREFOR ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; NUCLEAR ENGINEERING ; NUCLEAR PHYSICS ; PHYSICS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULARRADIATION OR PARTICLE BOMBARDMENT ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TREATING RADIOACTIVELY CONTAMINATED MATERIAL ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1977</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19770825&amp;DB=EPODOC&amp;CC=SU&amp;NR=293395A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19770825&amp;DB=EPODOC&amp;CC=SU&amp;NR=293395A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHAKHOVTSOV V.I.,SU</creatorcontrib><creatorcontrib>RUDENKO M.I.,SU</creatorcontrib><creatorcontrib>ATROSHCHENKO L.V.,SU</creatorcontrib><creatorcontrib>KOSHKIN V.M.,SU</creatorcontrib><creatorcontrib>GALCHINETSKIJ L.P.,SU</creatorcontrib><title>CRYSTALLINE SEMICONDUCTOR MATERIAL</title><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>DECONTAMINATION ARRANGEMENTS THEREFOR</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>NUCLEAR ENGINEERING</subject><subject>NUCLEAR PHYSICS</subject><subject>PHYSICS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULARRADIATION OR PARTICLE BOMBARDMENT</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TREATING RADIOACTIVELY CONTAMINATED MATERIAL</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1977</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFByDooMDnH08fH0c1UIdvX1dPb3cwl1DvEPUvB1DHEN8nT04WFgTUvMKU7lhdLcDPJuriHOHrqpBfnxqcUFicmpeakl8cGhRpbGxpamjobGhFUAAN3HIis</recordid><startdate>19770825</startdate><enddate>19770825</enddate><creator>SHAKHOVTSOV V.I.,SU</creator><creator>RUDENKO M.I.,SU</creator><creator>ATROSHCHENKO L.V.,SU</creator><creator>KOSHKIN V.M.,SU</creator><creator>GALCHINETSKIJ L.P.,SU</creator><scope>EVB</scope></search><sort><creationdate>19770825</creationdate><title>CRYSTALLINE SEMICONDUCTOR MATERIAL</title><author>SHAKHOVTSOV V.I.,SU ; RUDENKO M.I.,SU ; ATROSHCHENKO L.V.,SU ; KOSHKIN V.M.,SU ; GALCHINETSKIJ L.P.,SU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_SU293395A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1977</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>DECONTAMINATION ARRANGEMENTS THEREFOR</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>NUCLEAR ENGINEERING</topic><topic>NUCLEAR PHYSICS</topic><topic>PHYSICS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULARRADIATION OR PARTICLE BOMBARDMENT</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TREATING RADIOACTIVELY CONTAMINATED MATERIAL</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SHAKHOVTSOV V.I.,SU</creatorcontrib><creatorcontrib>RUDENKO M.I.,SU</creatorcontrib><creatorcontrib>ATROSHCHENKO L.V.,SU</creatorcontrib><creatorcontrib>KOSHKIN V.M.,SU</creatorcontrib><creatorcontrib>GALCHINETSKIJ L.P.,SU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHAKHOVTSOV V.I.,SU</au><au>RUDENKO M.I.,SU</au><au>ATROSHCHENKO L.V.,SU</au><au>KOSHKIN V.M.,SU</au><au>GALCHINETSKIJ L.P.,SU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CRYSTALLINE SEMICONDUCTOR MATERIAL</title><date>1977-08-25</date><risdate>1977</risdate><oa>free_for_read</oa></addata></record>
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recordid cdi_epo_espacenet_SU293395A1
source esp@cenet
subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
DECONTAMINATION ARRANGEMENTS THEREFOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PHYSICS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULARRADIATION OR PARTICLE BOMBARDMENT
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TREATING RADIOACTIVELY CONTAMINATED MATERIAL
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title CRYSTALLINE SEMICONDUCTOR MATERIAL
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T16%3A37%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHAKHOVTSOV%20V.I.,SU&rft.date=1977-08-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ESU293395A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true