METHOD FOR PRODUCING SILICON EPITAXIAL STRUCTURES

FIELD: manufacture of silicon devices and integrated circuits including silicon epitaxial growth in hydrogen environment.SUBSTANCE: proposed method includes organization of n-conductivity regions in silicon, surface doping with acceptor impurity, oxidation, opening of windows in oxide, and epitaxial...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ljubimov Evgenij Sergeevich, Basov Aleksandr Sergeevich, Manzha Nikolaj Mikhajlovich, Chistjakov Jurij Dmitrievich, Kokin Vil'jam Nikolaevich
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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