PROCESS OF MANUFACTURE OF HETEROEPITAXIAL LAYERS OF GALLIUM ARSENIDE

FIELD: semiconductor technology. SUBSTANCE: invention may find use in manufacture of device structures for micro- and optoelectronics by method of liquid epitaxy. Epitaxial growth is performed from heavily oversaturated solution-melt which is achieved thanks to high rates of cooling. Under such cond...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Abramov A.V, Dolganov A.V, Mizerov M.N, Seliverstov O.V, Tret'jakov D.N, Derjagin N.G
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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