Ferroelectric memory transistor with resistively coupled floating gate

The present invention proposes a new type of single-transistor memory device, which stores information using the polarization of a ferroelectric material. The device is a floating-gate FET, with a ferroelectric material positioned between the gate and the floating gate, and a resistance, preferably...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BLACK CHARLES THOMAS, WELSER JEFFREY JOHN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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