Deposition of titanium nitride films having improved uniformity
I have found that in order to improve sheet resistance uniformity of metal nitride films, such as titanium nitride, the chamber must be operated at low pressure. The nitrogen gas flow rates required to deposit metal nitride is determined, and the pumping speed in the chamber is increased to produce...
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| creator | NGAN KENNY KING-TAI |
| description | I have found that in order to improve sheet resistance uniformity of metal nitride films, such as titanium nitride, the chamber must be operated at low pressure. The nitrogen gas flow rates required to deposit metal nitride is determined, and the pumping speed in the chamber is increased to produce uniform films at low pressure. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_SG65737A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>SG65737A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_SG65737A13</originalsourceid><addsrcrecordid>eNrjZLB3SS3IL84syczPU8hPUyjJLEnMyyzNVcjLLCnKTElVSMvMyS1WyEgsy8xLV8jMLSjKL0tNUSjNy0zLL8rNLKnkYWBNS8wpTuWF0twMcm6uIc4eukBj41OLCxKTU_NSS-KD3c1MzY3NHQ2NCSoAAMb5MI0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Deposition of titanium nitride films having improved uniformity</title><source>esp@cenet</source><creator>NGAN KENNY KING-TAI</creator><creatorcontrib>NGAN KENNY KING-TAI</creatorcontrib><description>I have found that in order to improve sheet resistance uniformity of metal nitride films, such as titanium nitride, the chamber must be operated at low pressure. The nitrogen gas flow rates required to deposit metal nitride is determined, and the pumping speed in the chamber is increased to produce uniform films at low pressure.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990622&DB=EPODOC&CC=SG&NR=65737A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990622&DB=EPODOC&CC=SG&NR=65737A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NGAN KENNY KING-TAI</creatorcontrib><title>Deposition of titanium nitride films having improved uniformity</title><description>I have found that in order to improve sheet resistance uniformity of metal nitride films, such as titanium nitride, the chamber must be operated at low pressure. The nitrogen gas flow rates required to deposit metal nitride is determined, and the pumping speed in the chamber is increased to produce uniform films at low pressure.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB3SS3IL84syczPU8hPUyjJLEnMyyzNVcjLLCnKTElVSMvMyS1WyEgsy8xLV8jMLSjKL0tNUSjNy0zLL8rNLKnkYWBNS8wpTuWF0twMcm6uIc4eukBj41OLCxKTU_NSS-KD3c1MzY3NHQ2NCSoAAMb5MI0</recordid><startdate>19990622</startdate><enddate>19990622</enddate><creator>NGAN KENNY KING-TAI</creator><scope>EVB</scope></search><sort><creationdate>19990622</creationdate><title>Deposition of titanium nitride films having improved uniformity</title><author>NGAN KENNY KING-TAI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_SG65737A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NGAN KENNY KING-TAI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NGAN KENNY KING-TAI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Deposition of titanium nitride films having improved uniformity</title><date>1999-06-22</date><risdate>1999</risdate><abstract>I have found that in order to improve sheet resistance uniformity of metal nitride films, such as titanium nitride, the chamber must be operated at low pressure. The nitrogen gas flow rates required to deposit metal nitride is determined, and the pumping speed in the chamber is increased to produce uniform films at low pressure.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Deposition of titanium nitride films having improved uniformity |
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