A semiconductor device having punch-through protected buried contacts and method for making the same

Adjacent buried contacts (11, 12, 13) formed at the principal surface of a well or substrate region (14) of a semiconductor device, each having a doped contact region (29, 30 31) of one conductivity type and a punch-through prevention region (36, 37, 38) of the opposite conductivity type surrounding...

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Bibliographische Detailangaben

Hauptverfasser:	MAUNTEL, RICHARD, W, HENIS, NEIL, B, PARRILLO, LOUIS, C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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