Use of oxalyl chloride to form chloride-doped silicon dioxide films on silicon substrates

A process of forming chlorine-doped silicon dioxide films on a silicon substrate comprises oxidizing the silicon substrate in the presence of a chlorine source, thereby forming the chlorine-doped silicon dioxide film on the silicon substrate, the chlorine source being oxalyl chloride.

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Bibliographische Detailangaben
Hauptverfasser:	MCGEARY, MICHAEL, J, BOEGLIN, HERMAN, J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A process of forming chlorine-doped silicon dioxide films on a silicon substrate comprises oxidizing the silicon substrate in the presence of a chlorine source, thereby forming the chlorine-doped silicon dioxide film on the silicon substrate, the chlorine source being oxalyl chloride.