DEPOSITION CHAMBER CLEANING USING IN SITU ACTIVATION OF MOLECULAR FLUORINE
Methods and apparatus for the cleaning reaction chambers using molecular fluorine as the cleaning material. The molecular fluorine is dissociated in-situ in the reaction chamber using the chamber RF power source. An exemplary method of cleaning a chemical vapor deposition chamber may comprise: intro...
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| creator | CIGAL, JEANARLES HWANG, YING-SIANG PETRI, STEFAN STOCKMAN, PAUL, ALAN |
| description | Methods and apparatus for the cleaning reaction chambers using molecular fluorine as the cleaning material. The molecular fluorine is dissociated in-situ in the reaction chamber using the chamber RF power source. An exemplary method of cleaning a chemical vapor deposition chamber may comprise: introducing molecular fluorine into the chamber; at least partially dissociating the molecular fluorine in situ with in the chamber to form fluorine radicals; allowing the fluorine radicals and molecular fluorine to react with unwanted deposits in the chamber; and evacuating the chamber. |
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The molecular fluorine is dissociated in-situ in the reaction chamber using the chamber RF power source. An exemplary method of cleaning a chemical vapor deposition chamber may comprise: introducing molecular fluorine into the chamber; at least partially dissociating the molecular fluorine in situ with in the chamber to form fluorine radicals; allowing the fluorine radicals and molecular fluorine to react with unwanted deposits in the chamber; and evacuating the chamber.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; CLEANING ; CLEANING IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PERFORMING OPERATIONS ; PREVENTION OF FOULING IN GENERAL ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130130&DB=EPODOC&CC=SG&NR=186363A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130130&DB=EPODOC&CC=SG&NR=186363A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CIGAL, JEANARLES</creatorcontrib><creatorcontrib>HWANG, YING-SIANG</creatorcontrib><creatorcontrib>PETRI, STEFAN</creatorcontrib><creatorcontrib>STOCKMAN, PAUL, ALAN</creatorcontrib><title>DEPOSITION CHAMBER CLEANING USING IN SITU ACTIVATION OF MOLECULAR FLUORINE</title><description>Methods and apparatus for the cleaning reaction chambers using molecular fluorine as the cleaning material. The molecular fluorine is dissociated in-situ in the reaction chamber using the chamber RF power source. An exemplary method of cleaning a chemical vapor deposition chamber may comprise: introducing molecular fluorine into the chamber; at least partially dissociating the molecular fluorine in situ with in the chamber to form fluorine radicals; allowing the fluorine radicals and molecular fluorine to react with unwanted deposits in the chamber; and evacuating the chamber.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPBycQ3wD_YM8fT3U3D2cPR1cg1ScPZxdfTz9HNXCA0GkZ5-CkAFoQqOziGeYY5glf5uCr7-Pq7OoT6OQQpuPqH-QZ5-rjwMrGmJOcWpvFCam0HezTXE2UM3tSA_PrW4IDE5NS-1JD7Y3dDCzNjM2NHQmLAKALkFLLk</recordid><startdate>20130130</startdate><enddate>20130130</enddate><creator>CIGAL, JEANARLES</creator><creator>HWANG, YING-SIANG</creator><creator>PETRI, STEFAN</creator><creator>STOCKMAN, PAUL, ALAN</creator><scope>EVB</scope></search><sort><creationdate>20130130</creationdate><title>DEPOSITION CHAMBER CLEANING USING IN SITU ACTIVATION OF MOLECULAR FLUORINE</title><author>CIGAL, JEANARLES ; HWANG, YING-SIANG ; PETRI, STEFAN ; STOCKMAN, PAUL, ALAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_SG186363A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>CLEANING</topic><topic>CLEANING IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PREVENTION OF FOULING IN GENERAL</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>CIGAL, JEANARLES</creatorcontrib><creatorcontrib>HWANG, YING-SIANG</creatorcontrib><creatorcontrib>PETRI, STEFAN</creatorcontrib><creatorcontrib>STOCKMAN, PAUL, ALAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CIGAL, JEANARLES</au><au>HWANG, YING-SIANG</au><au>PETRI, STEFAN</au><au>STOCKMAN, PAUL, ALAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEPOSITION CHAMBER CLEANING USING IN SITU ACTIVATION OF MOLECULAR FLUORINE</title><date>2013-01-30</date><risdate>2013</risdate><abstract>Methods and apparatus for the cleaning reaction chambers using molecular fluorine as the cleaning material. The molecular fluorine is dissociated in-situ in the reaction chamber using the chamber RF power source. An exemplary method of cleaning a chemical vapor deposition chamber may comprise: introducing molecular fluorine into the chamber; at least partially dissociating the molecular fluorine in situ with in the chamber to form fluorine radicals; allowing the fluorine radicals and molecular fluorine to react with unwanted deposits in the chamber; and evacuating the chamber.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
| title | DEPOSITION CHAMBER CLEANING USING IN SITU ACTIVATION OF MOLECULAR FLUORINE |
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