METHOD FOR PRODUCING A SILICON INGOT

METHOD FOR PRODUCING A SILICON INGOT

METHOD FOR PRODUCING A SILICON INGOTMethod for producing a silicon ingot, comprising the following steps: providing a container (3) to receive a silicon melt (2), providing a temperature control device (9) to control the temperature of the silicon melt (2) in the container (3), arranging raw materia...

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Bibliographische Detailangaben
Hauptverfasser: ANDREAS KRAUSE, MARK HOLLATZ, ARMIN MUELLER, GERD FISCHER, BERNHARD FREUDENBERG, JOSEF STENZENBERGER
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:METHOD FOR PRODUCING A SILICON INGOTMethod for producing a silicon ingot, comprising the following steps: providing a container (3) to receive a silicon melt (2), providing a temperature control device (9) to control the temperature of the silicon melt (2) in the container (3), arranging raw material in the container (3) comprising silicon and at least one nucleation agent to assist aheterogeneous nucleation in the silicon melt (2), and control of the temperature in the container (3) for the directed solidification of the silicon melt (2), the nucleation agent comprising nanoscale particles.- Fig. 1 -