METHOD AND DEVICE FOR PRODUCING SILICON BLOCKS

METHOD AND DEVICE FOR PRODUCING SILICON BLOCKSA method for producing silicon blocks comprises providing a crucible (1; la; lb; 1c) for receiving a silicon melt, with a base (2; 2a; 2b) and a plurality of side walls (3; 3a; 3b) connected to the base (2; 2a; 2b), attaching nuclei (9) at least on an in...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HOLLATZ MARK, NAUERT DOREEN, FREUDENBERG BERNHARD, DIETRICH MARC, HENTSCHE MELANIE, APEL MARKUS
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	METHOD AND DEVICE FOR PRODUCING SILICON BLOCKSA method for producing silicon blocks comprises providing a crucible (1; la; lb; 1c) for receiving a silicon melt, with a base (2; 2a; 2b) and a plurality of side walls (3; 3a; 3b) connected to the base (2; 2a; 2b), attaching nuclei (9) at least on an inner side (6) of the base (2; 2a; 2b) of the crucible (1; la; lb; 1c), the nuclei (9) having a melt temperature, whichis greater than the melt temperature of silicon, filling the crucible (1; la; lb; lc) with the silicon melt, solidifying the silicon melt beginning on the nuclei (9) and removing the solidified silicon from the crucible (1; la; lb; 1c).- Fig. 1 -