METHOD FOR FABRICATING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE
The invention relates to a method for fabricating a semiconductor substrate comprising the steps of: providing a semiconductor on insulator type substrate, providing a diffusion barrier layer and providing a second semiconductor layer. By providing the diffusion barrier layer, it becomes possible to...
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| creator | FIGUET CHRISTOPHE BOUVIER CHRISTOPHE DROUIN ALEXISE MAURICE THIBAUT CAILLER CELINE |
| description | The invention relates to a method for fabricating a semiconductor substrate comprising the steps of: providing a semiconductor on insulator type substrate, providing a diffusion barrier layer and providing a second semiconductor layer. By providing the diffusion barrier layer, it becomes possible to suppress diffusion from the highly doped first semiconductor layer into the second semiconductor layer. The invention also relates to a corresponding semiconductor substrate and opto-electronic devices comprising such a substrate. - |
| format | Patent |
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By providing the diffusion barrier layer, it becomes possible to suppress diffusion from the highly doped first semiconductor layer into the second semiconductor layer. The invention also relates to a corresponding semiconductor substrate and opto-electronic devices comprising such a substrate. -</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100729&DB=EPODOC&CC=SG&NR=162653A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100729&DB=EPODOC&CC=SG&NR=162653A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FIGUET CHRISTOPHE</creatorcontrib><creatorcontrib>BOUVIER CHRISTOPHE</creatorcontrib><creatorcontrib>DROUIN ALEXISE</creatorcontrib><creatorcontrib>MAURICE THIBAUT</creatorcontrib><creatorcontrib>CAILLER CELINE</creatorcontrib><title>METHOD FOR FABRICATING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE</title><description>The invention relates to a method for fabricating a semiconductor substrate comprising the steps of: providing a semiconductor on insulator type substrate, providing a diffusion barrier layer and providing a second semiconductor layer. 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| subjects | BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE |
| title | METHOD FOR FABRICATING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE |
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