SINGLE PHOTON AVALANCHE DETECTOR, METHOD FOR USE THEREFORE AND METHOD FOR ITS MANUFACTURE

SINGLE PHOTON AVALANCHE DETECTOR, METHOD FOR USE THEREFORE AND METHOD FOR ITS MANUFACTURE

A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based ab...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: DUMAS, Derek, MIRZA, Muhammad M, KIRDODA, Jaroslaw, PAUL, Douglas John, MILLAR, Ross W, BULLER, Gerald S, VINES, Peter, KUZMENKO, Kateryna
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator DUMAS, Derek
MIRZA, Muhammad M
KIRDODA, Jaroslaw
PAUL, Douglas John
MILLAR, Ross W
BULLER, Gerald S
VINES, Peter
KUZMENKO, Kateryna
description A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based absorber layer, formed over the charge sheet layer and/or the avalanche layer, and overlapping the charge sheet layer, the Ge-based absorber layer having an in-plane width; wherein, at least in one in-plane direction, the in-plane width of the Ge-based absorber layer is greater than the in-plane width of the p-type charge sheet layer.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_SG11202102339RA</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>SG11202102339RA</sourcerecordid><originalsourceid>FETCH-epo_espacenet_SG11202102339RA3</originalsourceid><addsrcrecordid>eNqNirEKwjAUALM4iPoPb3BUaJPJ8ZG8NIU2keSl4FSKxEm0UP8fHRwcnY7jbi0uqfVNR3B2gYMHHLBDrx2BISbNIR6gJ3bBgA0RciJgR5E-QoDe_MaWE_Tos0XNOdJWrG7TfSm7Lzdib4m1O5b5OZZlnq7lUV5jaupaVrKupFKniOrP7Q0pBTKu</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SINGLE PHOTON AVALANCHE DETECTOR, METHOD FOR USE THEREFORE AND METHOD FOR ITS MANUFACTURE</title><source>esp@cenet</source><creator>DUMAS, Derek ; MIRZA, Muhammad M ; KIRDODA, Jaroslaw ; PAUL, Douglas John ; MILLAR, Ross W ; BULLER, Gerald S ; VINES, Peter ; KUZMENKO, Kateryna</creator><creatorcontrib>DUMAS, Derek ; MIRZA, Muhammad M ; KIRDODA, Jaroslaw ; PAUL, Douglas John ; MILLAR, Ross W ; BULLER, Gerald S ; VINES, Peter ; KUZMENKO, Kateryna</creatorcontrib><description>A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based absorber layer, formed over the charge sheet layer and/or the avalanche layer, and overlapping the charge sheet layer, the Ge-based absorber layer having an in-plane width; wherein, at least in one in-plane direction, the in-plane width of the Ge-based absorber layer is greater than the in-plane width of the p-type charge sheet layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210429&amp;DB=EPODOC&amp;CC=SG&amp;NR=11202102339RA$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210429&amp;DB=EPODOC&amp;CC=SG&amp;NR=11202102339RA$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DUMAS, Derek</creatorcontrib><creatorcontrib>MIRZA, Muhammad M</creatorcontrib><creatorcontrib>KIRDODA, Jaroslaw</creatorcontrib><creatorcontrib>PAUL, Douglas John</creatorcontrib><creatorcontrib>MILLAR, Ross W</creatorcontrib><creatorcontrib>BULLER, Gerald S</creatorcontrib><creatorcontrib>VINES, Peter</creatorcontrib><creatorcontrib>KUZMENKO, Kateryna</creatorcontrib><title>SINGLE PHOTON AVALANCHE DETECTOR, METHOD FOR USE THEREFORE AND METHOD FOR ITS MANUFACTURE</title><description>A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based absorber layer, formed over the charge sheet layer and/or the avalanche layer, and overlapping the charge sheet layer, the Ge-based absorber layer having an in-plane width; wherein, at least in one in-plane direction, the in-plane width of the Ge-based absorber layer is greater than the in-plane width of the p-type charge sheet layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNirEKwjAUALM4iPoPb3BUaJPJ8ZG8NIU2keSl4FSKxEm0UP8fHRwcnY7jbi0uqfVNR3B2gYMHHLBDrx2BISbNIR6gJ3bBgA0RciJgR5E-QoDe_MaWE_Tos0XNOdJWrG7TfSm7Lzdib4m1O5b5OZZlnq7lUV5jaupaVrKupFKniOrP7Q0pBTKu</recordid><startdate>20210429</startdate><enddate>20210429</enddate><creator>DUMAS, Derek</creator><creator>MIRZA, Muhammad M</creator><creator>KIRDODA, Jaroslaw</creator><creator>PAUL, Douglas John</creator><creator>MILLAR, Ross W</creator><creator>BULLER, Gerald S</creator><creator>VINES, Peter</creator><creator>KUZMENKO, Kateryna</creator><scope>EVB</scope></search><sort><creationdate>20210429</creationdate><title>SINGLE PHOTON AVALANCHE DETECTOR, METHOD FOR USE THEREFORE AND METHOD FOR ITS MANUFACTURE</title><author>DUMAS, Derek ; MIRZA, Muhammad M ; KIRDODA, Jaroslaw ; PAUL, Douglas John ; MILLAR, Ross W ; BULLER, Gerald S ; VINES, Peter ; KUZMENKO, Kateryna</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_SG11202102339RA3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>DUMAS, Derek</creatorcontrib><creatorcontrib>MIRZA, Muhammad M</creatorcontrib><creatorcontrib>KIRDODA, Jaroslaw</creatorcontrib><creatorcontrib>PAUL, Douglas John</creatorcontrib><creatorcontrib>MILLAR, Ross W</creatorcontrib><creatorcontrib>BULLER, Gerald S</creatorcontrib><creatorcontrib>VINES, Peter</creatorcontrib><creatorcontrib>KUZMENKO, Kateryna</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DUMAS, Derek</au><au>MIRZA, Muhammad M</au><au>KIRDODA, Jaroslaw</au><au>PAUL, Douglas John</au><au>MILLAR, Ross W</au><au>BULLER, Gerald S</au><au>VINES, Peter</au><au>KUZMENKO, Kateryna</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SINGLE PHOTON AVALANCHE DETECTOR, METHOD FOR USE THEREFORE AND METHOD FOR ITS MANUFACTURE</title><date>2021-04-29</date><risdate>2021</risdate><abstract>A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based absorber layer, formed over the charge sheet layer and/or the avalanche layer, and overlapping the charge sheet layer, the Ge-based absorber layer having an in-plane width; wherein, at least in one in-plane direction, the in-plane width of the Ge-based absorber layer is greater than the in-plane width of the p-type charge sheet layer.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_SG11202102339RA
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SINGLE PHOTON AVALANCHE DETECTOR, METHOD FOR USE THEREFORE AND METHOD FOR ITS MANUFACTURE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T01%3A35%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DUMAS,%20Derek&rft.date=2021-04-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ESG11202102339RA%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true