SLURRY AND POLISHING METHOD

A slurry containing abrasive grains and a liquid medium, in which the abrasive grains contain at least one metal compound selected from the group consisting of a metal oxide and a metal hydroxide, the metal compound contains a metal capable of taking a plurality of valences, and when the slurry is b...

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Hauptverfasser: KUKITA Tomomi, NOMURA Satoyuki, MATSUMOTO Takaaki, HASEGAWA Tomoyasu, IWANO Tomohiro
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creator KUKITA Tomomi
NOMURA Satoyuki
MATSUMOTO Takaaki
HASEGAWA Tomoyasu
IWANO Tomohiro
description A slurry containing abrasive grains and a liquid medium, in which the abrasive grains contain at least one metal compound selected from the group consisting of a metal oxide and a metal hydroxide, the metal compound contains a metal capable of taking a plurality of valences, and when the slurry is brought into contact with a surface to be polished to bring the abrasive grains into contact with the surface to be polished, the slurry yields 0.13 or more in X-ray photoelectron spectroscopy as a ratio of the lowest valence among the plurality of valences of the metal.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_SG11202100610RA</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>SG11202100610RA</sourcerecordid><originalsourceid>FETCH-epo_espacenet_SG11202100610RA3</originalsourceid><addsrcrecordid>eNrjZJAO9gkNCopUcPRzUQjw9_EM9vD0c1fwdQ3x8HfhYWBNS8wpTuWF0twMKm6uIc4euqkF-fGpxQWJyal5qSXxwe6GhkYGRoYGBmaGBkGOxkQqAwAbeSHs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SLURRY AND POLISHING METHOD</title><source>esp@cenet</source><creator>KUKITA Tomomi ; NOMURA Satoyuki ; MATSUMOTO Takaaki ; HASEGAWA Tomoyasu ; IWANO Tomohiro</creator><creatorcontrib>KUKITA Tomomi ; NOMURA Satoyuki ; MATSUMOTO Takaaki ; HASEGAWA Tomoyasu ; IWANO Tomohiro</creatorcontrib><description>A slurry containing abrasive grains and a liquid medium, in which the abrasive grains contain at least one metal compound selected from the group consisting of a metal oxide and a metal hydroxide, the metal compound contains a metal capable of taking a plurality of valences, and when the slurry is brought into contact with a surface to be polished to bring the abrasive grains into contact with the surface to be polished, the slurry yields 0.13 or more in X-ray photoelectron spectroscopy as a ratio of the lowest valence among the plurality of valences of the metal.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210225&amp;DB=EPODOC&amp;CC=SG&amp;NR=11202100610RA$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210225&amp;DB=EPODOC&amp;CC=SG&amp;NR=11202100610RA$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUKITA Tomomi</creatorcontrib><creatorcontrib>NOMURA Satoyuki</creatorcontrib><creatorcontrib>MATSUMOTO Takaaki</creatorcontrib><creatorcontrib>HASEGAWA Tomoyasu</creatorcontrib><creatorcontrib>IWANO Tomohiro</creatorcontrib><title>SLURRY AND POLISHING METHOD</title><description>A slurry containing abrasive grains and a liquid medium, in which the abrasive grains contain at least one metal compound selected from the group consisting of a metal oxide and a metal hydroxide, the metal compound contains a metal capable of taking a plurality of valences, and when the slurry is brought into contact with a surface to be polished to bring the abrasive grains into contact with the surface to be polished, the slurry yields 0.13 or more in X-ray photoelectron spectroscopy as a ratio of the lowest valence among the plurality of valences of the metal.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAO9gkNCopUcPRzUQjw9_EM9vD0c1fwdQ3x8HfhYWBNS8wpTuWF0twMKm6uIc4euqkF-fGpxQWJyal5qSXxwe6GhkYGRoYGBmaGBkGOxkQqAwAbeSHs</recordid><startdate>20210225</startdate><enddate>20210225</enddate><creator>KUKITA Tomomi</creator><creator>NOMURA Satoyuki</creator><creator>MATSUMOTO Takaaki</creator><creator>HASEGAWA Tomoyasu</creator><creator>IWANO Tomohiro</creator><scope>EVB</scope></search><sort><creationdate>20210225</creationdate><title>SLURRY AND POLISHING METHOD</title><author>KUKITA Tomomi ; NOMURA Satoyuki ; MATSUMOTO Takaaki ; HASEGAWA Tomoyasu ; IWANO Tomohiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_SG11202100610RA3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KUKITA Tomomi</creatorcontrib><creatorcontrib>NOMURA Satoyuki</creatorcontrib><creatorcontrib>MATSUMOTO Takaaki</creatorcontrib><creatorcontrib>HASEGAWA Tomoyasu</creatorcontrib><creatorcontrib>IWANO Tomohiro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KUKITA Tomomi</au><au>NOMURA Satoyuki</au><au>MATSUMOTO Takaaki</au><au>HASEGAWA Tomoyasu</au><au>IWANO Tomohiro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SLURRY AND POLISHING METHOD</title><date>2021-02-25</date><risdate>2021</risdate><abstract>A slurry containing abrasive grains and a liquid medium, in which the abrasive grains contain at least one metal compound selected from the group consisting of a metal oxide and a metal hydroxide, the metal compound contains a metal capable of taking a plurality of valences, and when the slurry is brought into contact with a surface to be polished to bring the abrasive grains into contact with the surface to be polished, the slurry yields 0.13 or more in X-ray photoelectron spectroscopy as a ratio of the lowest valence among the plurality of valences of the metal.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SLURRY AND POLISHING METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T09%3A55%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KUKITA%20Tomomi&rft.date=2021-02-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ESG11202100610RA%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true