TECHNIQUES TO IMPROVE ADHESION AND DEFECTS FOR TUNGSTEN CARBIDE FILM

TECHNIQUES TO IMPROVE ADHESION AND DEFECTS FOR TUNGSTEN CARBIDE FILM

Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In on...

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Hauptverfasser: SINGH, Anup Kumar, SHAH, Vivek Bharat, KUMAR, Bhaskar, BALASUBRAMANIAN, Ganesh
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SINGH, Anup Kumar
SHAH, Vivek Bharat
KUMAR, Bhaskar
BALASUBRAMANIAN, Ganesh
description Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title TECHNIQUES TO IMPROVE ADHESION AND DEFECTS FOR TUNGSTEN CARBIDE FILM
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