TUNGSTEN TARGET

There is provided a tungsten sputtering target that can provide a film deposition rate with less fluctuation over the target life. A tungsten sputtering target, wherein an area ratio of crystal grains having any of {100}, {110} and {111} planes oriented to a sputtering surface is 30% or less for any...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SENDA, Shinichiro, DASAI, Takafumi
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator SENDA, Shinichiro
DASAI, Takafumi
description There is provided a tungsten sputtering target that can provide a film deposition rate with less fluctuation over the target life. A tungsten sputtering target, wherein an area ratio of crystal grains having any of {100}, {110} and {111} planes oriented to a sputtering surface is 30% or less for any of the orientation planes, and an area ratio in total of crystal grains having orientation planes oriented to the sputtering surface other than {100}, {110} and {111} planes is 46% or more, the area ratio being obtained by an analysis of a cross section perpendicular to the sputtering surface with an inverse pole figure mapping using electron backscatter diffraction,
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_SG11201908654UA</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>SG11201908654UA</sourcerecordid><originalsourceid>FETCH-epo_espacenet_SG11201908654UA3</originalsourceid><addsrcrecordid>eNrjZOAPCfVzDw5x9VMIcQxydw3hYWBNS8wpTuWF0twMKm6uIc4euqkF-fGpxQWJyal5qSXxwe6GhkYGhpYGFmamJqGOxkQqAwClaB7h</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>TUNGSTEN TARGET</title><source>esp@cenet</source><creator>SENDA, Shinichiro ; DASAI, Takafumi</creator><creatorcontrib>SENDA, Shinichiro ; DASAI, Takafumi</creatorcontrib><description>There is provided a tungsten sputtering target that can provide a film deposition rate with less fluctuation over the target life. A tungsten sputtering target, wherein an area ratio of crystal grains having any of {100}, {110} and {111} planes oriented to a sputtering surface is 30% or less for any of the orientation planes, and an area ratio in total of crystal grains having orientation planes oriented to the sputtering surface other than {100}, {110} and {111} planes is 46% or more, the area ratio being obtained by an analysis of a cross section perpendicular to the sputtering surface with an inverse pole figure mapping using electron backscatter diffraction,</description><language>eng</language><subject>CASTING ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MAKING METALLIC POWDER ; MANUFACTURE OF ARTICLES FROM METALLIC POWDER ; METALLURGY ; PERFORMING OPERATIONS ; POWDER METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; WORKING METALLIC POWDER</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191030&amp;DB=EPODOC&amp;CC=SG&amp;NR=11201908654UA$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20191030&amp;DB=EPODOC&amp;CC=SG&amp;NR=11201908654UA$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SENDA, Shinichiro</creatorcontrib><creatorcontrib>DASAI, Takafumi</creatorcontrib><title>TUNGSTEN TARGET</title><description>There is provided a tungsten sputtering target that can provide a film deposition rate with less fluctuation over the target life. A tungsten sputtering target, wherein an area ratio of crystal grains having any of {100}, {110} and {111} planes oriented to a sputtering surface is 30% or less for any of the orientation planes, and an area ratio in total of crystal grains having orientation planes oriented to the sputtering surface other than {100}, {110} and {111} planes is 46% or more, the area ratio being obtained by an analysis of a cross section perpendicular to the sputtering surface with an inverse pole figure mapping using electron backscatter diffraction,</description><subject>CASTING</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MAKING METALLIC POWDER</subject><subject>MANUFACTURE OF ARTICLES FROM METALLIC POWDER</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>POWDER METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><subject>WORKING METALLIC POWDER</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAPCfVzDw5x9VMIcQxydw3hYWBNS8wpTuWF0twMKm6uIc4euqkF-fGpxQWJyal5qSXxwe6GhkYGhpYGFmamJqGOxkQqAwClaB7h</recordid><startdate>20191030</startdate><enddate>20191030</enddate><creator>SENDA, Shinichiro</creator><creator>DASAI, Takafumi</creator><scope>EVB</scope></search><sort><creationdate>20191030</creationdate><title>TUNGSTEN TARGET</title><author>SENDA, Shinichiro ; DASAI, Takafumi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_SG11201908654UA3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>CASTING</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MAKING METALLIC POWDER</topic><topic>MANUFACTURE OF ARTICLES FROM METALLIC POWDER</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>POWDER METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><topic>WORKING METALLIC POWDER</topic><toplevel>online_resources</toplevel><creatorcontrib>SENDA, Shinichiro</creatorcontrib><creatorcontrib>DASAI, Takafumi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SENDA, Shinichiro</au><au>DASAI, Takafumi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TUNGSTEN TARGET</title><date>2019-10-30</date><risdate>2019</risdate><abstract>There is provided a tungsten sputtering target that can provide a film deposition rate with less fluctuation over the target life. A tungsten sputtering target, wherein an area ratio of crystal grains having any of {100}, {110} and {111} planes oriented to a sputtering surface is 30% or less for any of the orientation planes, and an area ratio in total of crystal grains having orientation planes oriented to the sputtering surface other than {100}, {110} and {111} planes is 46% or more, the area ratio being obtained by an analysis of a cross section perpendicular to the sputtering surface with an inverse pole figure mapping using electron backscatter diffraction,</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_SG11201908654UA
source esp@cenet
subjects CASTING
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
MAKING METALLIC POWDER
MANUFACTURE OF ARTICLES FROM METALLIC POWDER
METALLURGY
PERFORMING OPERATIONS
POWDER METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TRANSPORTING
WORKING METALLIC POWDER
title TUNGSTEN TARGET
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T12%3A58%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SENDA,%20Shinichiro&rft.date=2019-10-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ESG11201908654UA%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true