AQUEOUS CLEAN SOLUTION WITH LOW COPPER ETCH RATE FOR ORGANIC RESIDUE REMOVAL IMPROVEMENT

AQUEOUS CLEAN SOLUTION WITH LOW COPPER ETCH RATE FOR ORGANIC RESIDUE REMOVAL IMPROVEMENT

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inh...

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Hauptverfasser: BOGGS, KARL, E, JENQ, SHRANE, NING, LIU, JUN, THOMAS, NICOLE
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator BOGGS, KARL, E
JENQ, SHRANE, NING
LIU, JUN
THOMAS, NICOLE
description A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title AQUEOUS CLEAN SOLUTION WITH LOW COPPER ETCH RATE FOR ORGANIC RESIDUE REMOVAL IMPROVEMENT
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