SILVER-ALLOY SPUTTERING TARGET FOR CONDUCTIVE-FILM FORMATION, AND METHOD FOR PRODUCING SAME
An aspect of this sputtering target has a component composition including 0.1 mass% to 1.5 mass% of In with a remainder of Ag and inevitable impurities, wherein an average grain diameter of crystal grains in an alloy is in a range of 30 µm or more to less than 150 µm, and a dispersion of grain diame...
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| creator | KOMIYAMA SHOZO KOIKE SHINYA FUNAKI SHINICHI OKUDA SEI |
| description | An aspect of this sputtering target has a component composition including 0.1 mass% to 1.5 mass% of In with a remainder of Ag and inevitable impurities, wherein an average grain diameter of crystal grains in an alloy is in a range of 30 µm or more to less than 150 µm, and a dispersion of grain diameters of the crystal grains is 20% or less of the average grain diameter. An aspect of this method for producing a sputtering target includes: subjecting a cast ingot having the above-described component composition to a hot rolling step, a cooling step and a machining step sequentially, wherein in the hot rolling step, one or more passes of finish hot rolling are carried out under conditions where a rolling reduction rate per pass is in a range of 20% to 50%, a strain rate is in a range of 3 /sec to 15 /sec, and a temperature after the pass is in a range of 400°C to 650°C, and in the cooling step, quenching is carried out at a cooling rate in a range of 200 °C/min to 1000 °C/min. |
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An aspect of this method for producing a sputtering target includes: subjecting a cast ingot having the above-described component composition to a hot rolling step, a cooling step and a machining step sequentially, wherein in the hot rolling step, one or more passes of finish hot rolling are carried out under conditions where a rolling reduction rate per pass is in a range of 20% to 50%, a strain rate is in a range of 3 /sec to 15 /sec, and a temperature after the pass is in a range of 400°C to 650°C, and in the cooling step, quenching is carried out at a cooling rate in a range of 200 °C/min to 1000 °C/min.</description><language>eng</language><subject>ALLOYS ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC HEATING ; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FERROUS OR NON-FERROUS ALLOYS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL ; METALLURGY ; PERFORMING OPERATIONS ; PUNCHING METAL ; ROLLING OF METAL ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140926&DB=EPODOC&CC=SG&NR=11201403319RA$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140926&DB=EPODOC&CC=SG&NR=11201403319RA$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOMIYAMA SHOZO</creatorcontrib><creatorcontrib>KOIKE SHINYA</creatorcontrib><creatorcontrib>FUNAKI SHINICHI</creatorcontrib><creatorcontrib>OKUDA SEI</creatorcontrib><title>SILVER-ALLOY SPUTTERING TARGET FOR CONDUCTIVE-FILM FORMATION, AND METHOD FOR PRODUCING SAME</title><description>An aspect of this sputtering target has a component composition including 0.1 mass% to 1.5 mass% of In with a remainder of Ag and inevitable impurities, wherein an average grain diameter of crystal grains in an alloy is in a range of 30 µm or more to less than 150 µm, and a dispersion of grain diameters of the crystal grains is 20% or less of the average grain diameter. An aspect of this method for producing a sputtering target includes: subjecting a cast ingot having the above-described component composition to a hot rolling step, a cooling step and a machining step sequentially, wherein in the hot rolling step, one or more passes of finish hot rolling are carried out under conditions where a rolling reduction rate per pass is in a range of 20% to 50%, a strain rate is in a range of 3 /sec to 15 /sec, and a temperature after the pass is in a range of 400°C to 650°C, and in the cooling step, quenching is carried out at a cooling rate in a range of 200 °C/min to 1000 °C/min.</description><subject>ALLOYS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC HEATING</subject><subject>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PUNCHING METAL</subject><subject>ROLLING OF METAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgO9vQJcw3SdfTx8Y9UCA4IDQlxDfL0c1cIcQxydw1RcPMPUnD293MJdQ7xDHPVdfP08QWJ-TqGePr76Sg4-rko-LqGePi7gFUGBPkDVYK0Bzv6uvIwsKYl5hSn8kJpbgYVN9cQZw_d1IL8-NTigsTk1LzUkvhgd0NDIwNDEwNjY0PLIEdjIpUBANpcM6Y</recordid><startdate>20140926</startdate><enddate>20140926</enddate><creator>KOMIYAMA SHOZO</creator><creator>KOIKE SHINYA</creator><creator>FUNAKI SHINICHI</creator><creator>OKUDA SEI</creator><scope>EVB</scope></search><sort><creationdate>20140926</creationdate><title>SILVER-ALLOY SPUTTERING TARGET FOR CONDUCTIVE-FILM FORMATION, AND METHOD FOR PRODUCING SAME</title><author>KOMIYAMA SHOZO ; KOIKE SHINYA ; FUNAKI SHINICHI ; OKUDA SEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_SG11201403319RA3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ALLOYS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC HEATING</topic><topic>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PUNCHING METAL</topic><topic>ROLLING OF METAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>KOMIYAMA SHOZO</creatorcontrib><creatorcontrib>KOIKE SHINYA</creatorcontrib><creatorcontrib>FUNAKI SHINICHI</creatorcontrib><creatorcontrib>OKUDA SEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KOMIYAMA SHOZO</au><au>KOIKE SHINYA</au><au>FUNAKI SHINICHI</au><au>OKUDA SEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SILVER-ALLOY SPUTTERING TARGET FOR CONDUCTIVE-FILM FORMATION, AND METHOD FOR PRODUCING SAME</title><date>2014-09-26</date><risdate>2014</risdate><abstract>An aspect of this sputtering target has a component composition including 0.1 mass% to 1.5 mass% of In with a remainder of Ag and inevitable impurities, wherein an average grain diameter of crystal grains in an alloy is in a range of 30 µm or more to less than 150 µm, and a dispersion of grain diameters of the crystal grains is 20% or less of the average grain diameter. An aspect of this method for producing a sputtering target includes: subjecting a cast ingot having the above-described component composition to a hot rolling step, a cooling step and a machining step sequentially, wherein in the hot rolling step, one or more passes of finish hot rolling are carried out under conditions where a rolling reduction rate per pass is in a range of 20% to 50%, a strain rate is in a range of 3 /sec to 15 /sec, and a temperature after the pass is in a range of 400°C to 650°C, and in the cooling step, quenching is carried out at a cooling rate in a range of 200 °C/min to 1000 °C/min.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ALLOYS BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL METALLURGY PERFORMING OPERATIONS PUNCHING METAL ROLLING OF METAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS |
| title | SILVER-ALLOY SPUTTERING TARGET FOR CONDUCTIVE-FILM FORMATION, AND METHOD FOR PRODUCING SAME |
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