FLUOROCARBON MOLECULES FOR HIGH ASPECT RATIO OXIDE ETCH

FLUOROCARBON MOLECULES FOR HIGH ASPECT RATIO OXIDE ETCH

Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hex...

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Hauptverfasser: ANDERSON, Curtis, DUSSARRAT, Christian, GUPTA, Rahul, STAFFORD, Nathan, OMARJEE, Vincent M
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ELECTRICITY
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creator ANDERSON, Curtis
DUSSARRAT, Christian
GUPTA, Rahul
STAFFORD, Nathan
OMARJEE, Vincent M
description Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
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title FLUOROCARBON MOLECULES FOR HIGH ASPECT RATIO OXIDE ETCH
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